Mathematical Modeling of Interface Movement during Diffusional Bonding of Surfaces

Rabindranath Ray

doi:10.4028/www.scientific.net/DDF.272.71

Paper Titles

Solid-Phase Diffusion Interaction in Multilayer Thin-Film System Cr/Cu/Ni at Pulse Laser Heating
p.31

Molecular Dynamics Simulation of Brittle Fracture in Bcc Iron
p.41

Diffusion in the AlMo₃ Ordered Intermetallic
p.51

First-Principles Investigation of the Alloying Effect of Mn and Cr in the Kink on the Edge Dislocation in BCC Iron
p.61

Mathematical Modeling of Interface Movement during Diffusional Bonding of Surfaces
p.71

Growth Kinetics of Boride Layers: A Modified Approach
p.79

Structure and Optical Properties of Magnetron Sputtered SiO_x Layers with Silicon Nanoparticles
p.87

Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides
p.99

Theoretical Determination of Pressure-Volume-Temperature Relationship of Some Alkali Halides
p.107

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Mathematical Modeling of Interface Movement during Diffusional Bonding of Surfaces

Abstract:

The concentration profile of Cu is modelled using semi-infinite geometry for diffusion couples of α and β phases in Cu-Al system. The dimensionless interface movement parameter γ is calculated, for various combinations of time and temperature, by root bracketing, bisection and inverse quadratic interpolation. A computational procedure is presented to calculate the concentration profile where the interface velocity (dε/dt) is high and/or with steep concentration gradient of the specie in the shrinking phase. In all cases the interface compositions are set at the equilibrium values given in the phase diagram with fixed composition of end members. The calculated profile match well with the experimental concentration profile as reported by Romig [3].