Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides

Dao Ren Gong; Dong Sheng Li; Zhi Zhong Yuan; De Ren Yang

doi:10.4028/www.scientific.net/DDF.272.99

Paper Titles

Diffusion in the AlMo₃ Ordered Intermetallic
p.51

First-Principles Investigation of the Alloying Effect of Mn and Cr in the Kink on the Edge Dislocation in BCC Iron
p.61

Mathematical Modeling of Interface Movement during Diffusional Bonding of Surfaces
p.71

Growth Kinetics of Boride Layers: A Modified Approach
p.79

Structure and Optical Properties of Magnetron Sputtered SiO_x Layers with Silicon Nanoparticles
p.87

Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides
p.99

Theoretical Determination of Pressure-Volume-Temperature Relationship of Some Alkali Halides
p.107

Investigations of the Defect Structures and EPR Parameters for the Tetragonal and Cubic Ni²⁺ Centers in AgX (X=Cl, Br)
p.117

Concentration Micro-Field for Lamellar Eutectic Growth
p.123

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Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides

Abstract:

Iron silicide films with two different structures were fabricated by electron beam evaporation (EBE) technique. X-ray diffraction (XRD), Fourier transform infrared (FTIR) and scanning electron microscope (SEM) were carried out to describe the characteristics and structures of the films. It was found that after annealing at 800oC for 5 h, the β-FeSi2 film formed in the sample with the structure of Si/Fe film on silicon substrate, while only FeSi film generated in the sample with the structure of Si/Fe/Si films on silicon substrate. It is considered that the different iron silicides may be due to the different reaction of iron with crystal silicon or amorphous silicon, which is related to diffusion of iron or silicon atoms.