Structure and Optical Properties of Magnetron Sputtered SiOx Layers with Silicon Nanoparticles

L. Khomenkova; N. Korsunska; T. Stara; Y. Goldstein; J. Jedrzejewski; E. Savir; C. Sada; Y. Emirov

doi:10.4028/www.scientific.net/DDF.272.87

Paper Titles

Diffusion in the AlMo₃ Ordered Intermetallic
p.51

First-Principles Investigation of the Alloying Effect of Mn and Cr in the Kink on the Edge Dislocation in BCC Iron
p.61

Mathematical Modeling of Interface Movement during Diffusional Bonding of Surfaces
p.71

Growth Kinetics of Boride Layers: A Modified Approach
p.79

Structure and Optical Properties of Magnetron Sputtered SiO_x Layers with Silicon Nanoparticles
p.87

Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides
p.99

Theoretical Determination of Pressure-Volume-Temperature Relationship of Some Alkali Halides
p.107

Investigations of the Defect Structures and EPR Parameters for the Tetragonal and Cubic Ni²⁺ Centers in AgX (X=Cl, Br)
p.117

Concentration Micro-Field for Lamellar Eutectic Growth
p.123

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 272Structure and Optical Properties of Magnetron...

Structure and Optical Properties of Magnetron Sputtered SiO_x Layers with Silicon Nanoparticles

Abstract:

The properties of SiOx layer prepared by magnetron sputtering is studied by photoluminescence Auger and SIMS methods. The depth distribution of emission characteristics and chemical composition is obtained. It is shown that as-sputtered SiOx layers are non-emitted and characterized by homogeneous enough chemical composition. High-temperature annealing in nitrogen atmosphere stimulates not only the Si nanocrystal formation but also the redistribution of silicon and the appearance of Si depleted region near layer-substrate interface. The last process is found to be dependent on excess Si content. It is found that decrease of silicon content in the depth of annealed layers is followed by the decrease of particle sizes that is proved by the blue shift of photoluminescence maximum. The possible reasons of the appearance of Si depleted region are discussed.