Self-Organization Behavior of Sub-Micron CdO Grains Grown during Vapour-Solid Transition

Abstract:

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Various deposits of CdO grains were observed on the surface of N 100 silicon crystals heated at 580 °C and 620 °C for 1 hour in an evaporation-deposition device, respectively. The ball-shaped crystals, and regular-prism-shaped crystals were found on top of bush-like long crystals. Two types of CdO self-organization aggregates were also observed, that is, regular circular-shaped dense aggregate and long-chainshaped aggregate. The self-organization aggregates were composed of numerous submicron CdO grains. The relationship between self-organization aggregates and surface defects of virgin N 100 silicon crystal was investigated. The results showed that the CdO self-organization aggregates were related to surface defects of the virgin N 100 silicon crystal, and a defect induced aggregation (DIA) model is suggested.

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Periodical:

Edited by:

David J. Fisher

Pages:

45-54

DOI:

10.4028/www.scientific.net/DDF.278.45

Citation:

J. Z. Zhang et al., "Self-Organization Behavior of Sub-Micron CdO Grains Grown during Vapour-Solid Transition", Defect and Diffusion Forum, Vol. 278, pp. 45-54, 2008

Online since:

July 2008

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$35.00

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