Self-Organization Behavior of Sub-Micron CdO Grains Grown during Vapour-Solid Transition

Ji Zhong Zhang; Wei Qiang Wang; Na Li

doi:10.4028/www.scientific.net/DDF.278.45

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Effect of Irradiation Doses on AlCu_6.5 Alloy Using Positron Annihilation Doppler Broadening Technique
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Dependence of Mono-Vacancy Formation Energy on the Parameter of Ashcroft's Potential
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X-Ray Characterization of Ag Impurities in Na_1-xAg_xCl
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Self-Organization Behavior of Sub-Micron CdO Grains Grown during Vapour-Solid Transition
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Studies on the Local Structure and the Spin Hamiltonian Parameters for Co²⁺ in CaTiO₃
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Self-Organization Behavior of Sub-Micron CdO Grains Grown during Vapour-Solid Transition

Abstract:

Various deposits of CdO grains were observed on the surface of N 100 silicon crystals heated at 580 °C and 620 °C for 1 hour in an evaporation-deposition device, respectively. The ball-shaped crystals, and regular-prism-shaped crystals were found on top of bush-like long crystals. Two types of CdO self-organization aggregates were also observed, that is, regular circular-shaped dense aggregate and long-chainshaped aggregate. The self-organization aggregates were composed of numerous submicron CdO grains. The relationship between self-organization aggregates and surface defects of virgin N 100 silicon crystal was investigated. The results showed that the CdO self-organization aggregates were related to surface defects of the virgin N 100 silicon crystal, and a defect induced aggregation (DIA) model is suggested.