Thin Film Dissolution into Semi-Infinite Substrates: Surprising Interface Kinetics and Dissolution Modes

Z. Erdélyi; Christophe Girardeaux; Dezső L. Beke; Jean Bernardini; Alain Portavoce; G.L. Katona; Z. Balogh; Andree Rolland

doi:10.4028/www.scientific.net/DDF.289-292.573

Paper Titles

The Oxide Scale Growth Mechanism on Fe20Cr5Al+RE Alloy in SO₂+O₂
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Determination of Diffusion Coefficients of Oxygen Vacancies in La_0.58Sr_0.4Co_0.2Fe_0.8O_3-δ Perovskite Type Oxides
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Interface Diffusion in Cu Processed by Means of Surface Mechanical Attrition Treatment
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Li Conductivity of Nanocrystalline Li₄Ti₅O₁₂ Prepared by a Sol-Gel Method and High-Energy Ball Milling
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Thin Film Dissolution into Semi-Infinite Substrates: Surprising Interface Kinetics and Dissolution Modes
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On the Formation of Unusual Diffusion Profiles in Cd_xZn_1-xTe Crystals after Implantation of Different Elements
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Evolution of Concentration Profiles and Diffusion Paths in Single-Phase Multicomponent Multilayered Assemblies
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Unusual Behaviour of the Dissolutions Kinetics of one Monolayer of Si in Cu(001)
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Self Diffusion in Liquid Titanium: Quasielastic Neutron Scattering and Molecular Dynamics Simulation
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Thin Film Dissolution into Semi-Infinite Substrates: Surprising Interface Kinetics and Dissolution Modes

Abstract:

Depending on the thermodynamic, structural and diffusion properties of the system, a thin deposit dissolves into a substrate by different mechanisms. In this communication these different behaviours, investigated by surface analytical techniques (AES, XPS, STM, UPS, etc) [ - ], are reviewed. The experiments were also supported by computer simulations. The obtained results are compared and it is summarized how different parameters influence the dissolution of a thin film in a substrate. Furthermore, it is show that i) the volume dissolution kinetics is different on the atomic-/nano-scale than on the microscopic scale due to the diffusion asymmetry ii) the volume and GB diffusion in one measurement can be separated and iii) pure (C-kinetic) GB diffusivities can be determined from thin film kinetics measurements performed under adequate conditions.