On the Formation of Unusual Diffusion Profiles in CdxZn1-xTe Crystals after Implantation of Different Elements

Abstract:

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It is known that the diffusion of Ag and Cu in Cd1 xZnxTe crystals exhibits unusual concentration profiles depending strongly on the external vapor pressure of Cd during diffusion. Recent experiments show that the dopant Na forms qualitatively the same diffusion profiles including the phenomenon of uphill diffusion. Also the transition elements Ni and Co show a strong dependence of the diffusion behavior on the external Cd pressure, but the shapes of the concentration profiles differ significantly from those known for Ag and Cu. The different behavior of Ag, Cu, and Na, on the one hand, and Ni and Co, on the other hand, are proposed to be connected to the respective charge states of the dopants at interstitial positions in Cd1 xZnxTe. For the dopants K and Au, unusual diffusion properties have not been observed. The respective diffusion coefficients are DK = 1.2(2)•10 10 cm2/s (750 K) and DAu = 8(2)•10 8 cm2/s (800 K).

Info:

Periodical:

Defect and Diffusion Forum (Volumes 289-292)

Edited by:

A. Agüero, J.M. Albella, M.P. Hierro, J. Phillibert and F.J. Pérez Trujillo

Pages:

587-592

DOI:

10.4028/www.scientific.net/DDF.289-292.587

Citation:

H. Wolf et al., "On the Formation of Unusual Diffusion Profiles in CdxZn1-xTe Crystals after Implantation of Different Elements", Defect and Diffusion Forum, Vols. 289-292, pp. 587-592, 2009

Online since:

April 2009

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$35.00

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