On the Formation of Unusual Diffusion Profiles in CdxZn1-xTe Crystals after Implantation of Different Elements

Herbert Wolf; F. Wagner; J. Kronenberg; Th. Wichert

doi:10.4028/www.scientific.net/DDF.289-292.587

Paper Titles

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Interface Diffusion in Cu Processed by Means of Surface Mechanical Attrition Treatment
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Li Conductivity of Nanocrystalline Li₄Ti₅O₁₂ Prepared by a Sol-Gel Method and High-Energy Ball Milling
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Thin Film Dissolution into Semi-Infinite Substrates: Surprising Interface Kinetics and Dissolution Modes
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On the Formation of Unusual Diffusion Profiles in Cd_xZn_1-xTe Crystals after Implantation of Different Elements
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Evolution of Concentration Profiles and Diffusion Paths in Single-Phase Multicomponent Multilayered Assemblies
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Unusual Behaviour of the Dissolutions Kinetics of one Monolayer of Si in Cu(001)
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Self Diffusion in Liquid Titanium: Quasielastic Neutron Scattering and Molecular Dynamics Simulation
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Alkaline-Earth Diffusion in Mixed Cation Glasses
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On the Formation of Unusual Diffusion Profiles in Cd_xZn_1-xTe Crystals after Implantation of Different Elements

Abstract:

It is known that the diffusion of Ag and Cu in Cd1 xZnxTe crystals exhibits unusual concentration profiles depending strongly on the external vapor pressure of Cd during diffusion. Recent experiments show that the dopant Na forms qualitatively the same diffusion profiles including the phenomenon of uphill diffusion. Also the transition elements Ni and Co show a strong dependence of the diffusion behavior on the external Cd pressure, but the shapes of the concentration profiles differ significantly from those known for Ag and Cu. The different behavior of Ag, Cu, and Na, on the one hand, and Ni and Co, on the other hand, are proposed to be connected to the respective charge states of the dopants at interstitial positions in Cd1 xZnxTe. For the dopants K and Au, unusual diffusion properties have not been observed. The respective diffusion coefficients are DK = 1.2(2)•10 10 cm2/s (750 K) and DAu = 8(2)•10 8 cm2/s (800 K).