Anomaly in Dependence of Vacancy Accumulation upon Grain Size
a.40
a.40
Configurational Entropy of Mixing of Interstitial Solid Solutions
a.41
a.41
Defect Properties via Density Functional Supercell Calculations
a.42
a.42
Density Functional Theory Calculation of Defect Energies
a.43
a.43
Donor Level of Interstitial Hydrogen in Semiconductors
a.44
a.44
First-Principles Calculations for Defects
a.45
a.45
Fokker Planck Approach for Modelling of Nano-Structural Defects
a.46
a.46
Kinetic Monte Carlo Simulation of Oxygen Vacancy Diffusion
a.47
a.47
New Mechanism for the Formation of Vacancy Voids
a.48
a.48
Donor Level of Interstitial Hydrogen in Semiconductors
Page: A44