Surface Composition Transformation of Thin Film Based on Al Grown by CBE on the (001) GaAs Surface Due to Laser Assistance

Dmitri V. Lioubtchenko; Tatiana A. Briantseva; Z.M. Lebedeva; Tim J. Bullough

doi:10.4028/www.scientific.net/DDF.316-317.89

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Surface Composition Transformation of Thin Film Based on Al Grown by CBE on the (001) GaAs Surface Due to Laser Assistance

Abstract:

It is shown that laser-assisted growth of Al films using the CBE method results in remarkable surface composition transformations. The values of the laser reflectivity are slightly correlated with the composition or with the metal thickness. The energy characteristics of the reactions guide the reflectivity changes, together with thickness changes. It was shown that the composition within the laser spot is different from that outside the laser spot due to the destruction of compounds under laser exposure.

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Defect and Diffusion Forum (Volumes 316-317)

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89-95

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https://doi.org/10.4028/www.scientific.net/DDF.316-317.89

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Online since:

May 2011

Authors:

Dmitri V. Lioubtchenko, Tatiana A. Briantseva, Z.M. Lebedeva, Tim J. Bullough

Keywords:

Al Film Growth, GaAs, Laser Assistance Growth

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