Low-Power Operation of Pt/Porous Si Schottky-Diode Gas-Sensor through a Reduction in its Breakdown Voltage

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Abstract:

In this work gas sensors based on PtSi Schottky diode using <100> n-type porous Si were designed, fabricated, and tested. These gas sensors detect polar gases (the gases with internal dipole moments) such as CO and non-polar gases (the gases without internal dipole moments) such as CO2. The operation of these Schottky diode sensors is carried out in breakdown region and shifts in their breakdown voltage in the presence of certain gases are mapped into the concentration of those gases in the environment. Fabrication of PtSi diode based gas sensors was reported earlier elsewhere. Our main objective in this work was to significantly reduce the breakdown voltage of these sensors hence making their use more economical. Such reduction was achieved through a series of systematic changes and optimization in the pore's geometries by careful study, analysis, and changes in the experimental conditions such as temperature, acid concentration, chemistry of the etching solution, and time.

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Defect and Diffusion Forum (Volumes 316-317)

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81-88

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May 2011

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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[1] F. Raissi, S. Mirzakuchaki, H. Moheb Jalili, & A. Erfanian, Room-Temperature Gas-Sensing Ability of PtSi/Porous Si Schottky Junctions, IEEE Sensors Journal, 6.

DOI: 10.1109/jsen.2005.854146

Google Scholar

[1] (2006).

Google Scholar

[2] A. Trinchi, K. Galatsis, W. Wlodarski and Y. X. Li, A Pt/Ga2O3-ZnO/SiC Schottky Diode Based Hydrocarbon Gas Sensor, IEEE Sensors Journal, 3 (2003) 548.

DOI: 10.1109/jsen.2003.817670

Google Scholar

[3] J. Das,  S. Dey, S. M. Hossain, Z. M. C. Rittersma, H.  Saha, A Hygrometer Comprising a Porous Silicon Humidity Sensor with Phase-Detection Electronics, IEEE Sensors, 3.

DOI: 10.1109/jsen.2003.816261

Google Scholar

[4] (2003) 414.

Google Scholar

[4] F. Raissi, M. Mohtashami Far, Highly Sensitive PtSi/Porous Si Schottky Detectors, IEEE Sensors, 2.

DOI: 10.1109/jsen.2002.806210

Google Scholar

[5] (2002) 476.

Google Scholar

[5] F. Raissi, N. A. Sheeni, Highly Sensitive near-IR Detectors using n-Type Porous Si, Sensors and Actuators, 104.

DOI: 10.1016/s0924-4247(02)00435-1

Google Scholar

[2] (2003) 117.

Google Scholar

[6] F. Raissi, M. S. Abrishamian, Tahere Emadi, Single-Electron Effect in PtSi/Porous Si Schottky Junctions, IEEE Trans. Elec. Dev., 51.

DOI: 10.1109/ted.2003.822471

Google Scholar

[3] (2004) 339.

Google Scholar

[7] D Brumhead, LT Canham, DM Seekings and PJ Tufton, Gravimetric Analysis of Pore Nucleation and Propagation in Anodized Silicon, Electrochimica Acta, 38[2-3] (1993) 191.

DOI: 10.1016/0013-4686(93)85128-l

Google Scholar