Defects and Diffusion in Semiconductors XIII

Volume 318

doi: 10.4028/www.scientific.net/DDF.318

Defects and Diffusion in Semiconductors XIII

Description:

This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: “Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide” (D.Vaya, A.Jain, S.Lodha, V.K.Sharma, S.C.Ameta), “Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles” (M.Ragam, N.Sankar, K.Ramachandran), “The Effect of a Light Impurity on the Electronic Structure of Dislocations in NiAl” (L.Chen, Z.Qiu), “Analysis of Finite Element Discretisation Schemes for Multi-Phase Darcy Flow” (D.P.Adhikary, A.H.Wilkins), “Theoretical Investigations of the Defect Structure for Ni3+ in ZnO” (Z.H.Zhang, S.Y.Wu, S.X.Zhang).

Review from Ringgold Inc., ProtoView: This volume collects five original papers concerned with the materials science topic of defects and diffusion in semiconductors, as well as 308 abstracts of papers on the same subject (occupying over half of the volume), in order to provide a review of work in the field for 2010. The five full papers address: the effect of KCl addition upon the photocatalytic activity of zinc sulphide, localized vibrational mode in manganese-doped zinc sulphide and cadmium sulphide nanoparticles, the effects of a light impurity on the electronic structure of dislocations in NiAl, analysis of finite element discretization schemes for multi-phase Darcy flow, and theoretical investigations of the defect structure for Ni3+ in ZnO.

Info:

ISBN-13:
978-3-03785-220-0
Editors:
D.J. Fisher
Pages:
199
Year:
2011
Edition:
softcover

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