Influence of Interface Energy and Grain Boundary on Elastic Modulus
a.266
a.266
Quantitative Description of Grain Boundary Kinetics
a.267
a.267
Interface Motion by Interface Diffusion Driven by Bulk Energy
a.268
a.268
Electronic Properties of Interfaces and Defects
a.269
a.269
Systematic Row and Zone Axis STEM Defect Image Simulations
a.270
a.270
Changes in Work Function from Stacking Faults in FCC Metals
a.271
a.271
First-Principles Study of Generalized Stacking-Fault Energy Surfaces
a.272
a.272
Charged Basal Stacking Fault Scattering in Nitride Semiconductors
a.273
a.273
Probability Density of Stacking Faults in Austenite
a.274
a.274
Systematic Row and Zone Axis STEM Defect Image Simulations
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