Electronic Properties of Interfaces and Defects
a.269
a.269
Systematic Row and Zone Axis STEM Defect Image Simulations
a.270
a.270
Changes in Work Function from Stacking Faults in FCC Metals
a.271
a.271
First-Principles Study of Generalized Stacking-Fault Energy Surfaces
a.272
a.272
Charged Basal Stacking Fault Scattering in Nitride Semiconductors
a.273
a.273
Probability Density of Stacking Faults in Austenite
a.274
a.274
Phase-Field Model for Deformation Twinning
a.275
a.275
Linear Instability and Initiation of Motion of a Twin Plane Under Load
a.276
a.276
Deformation Slip and Twinning in Semiconductors
a.277
a.277
Charged Basal Stacking Fault Scattering in Nitride Semiconductors
Page: A273