Bulk Growth of InGaSb Alloy Semiconductor under Terrestrial Conditions: A Preliminary Study for Microgravity Experiments at ISS

M. Arivanandhan; G. Rajesh; A. Tanaka; T. Ozawa; Yasunori Okano; Y. Inatomi; Yasuhiro Hayakawa

doi:10.4028/www.scientific.net/DDF.323-325.539

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Bulk Growth of InGaSb Alloy Semiconductor under Terrestrial Conditions: A Preliminary Study for Microgravity Experiments at ISS
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 323-325Bulk Growth of InGaSb Alloy Semiconductor under...

Bulk Growth of InGaSb Alloy Semiconductor under Terrestrial Conditions: A Preliminary Study for Microgravity Experiments at ISS

Abstract:

As a preliminary experiment for the growth of InGaSb alloy crystals under microgravity at International Space Station (ISS), bulk crystal was grown under terrestrial condition using the same gradient heating furnace (GHF). Czochralski grown GaSb <111>B single crystal was used as a seed and feed crystals for the growth of InGaSb bulk crystals. During the growth, heat pulses were intentionally introduced periodically to create the growth striations. From the striations, the growth rate of the grown crystal was estimated. The results show that the growth rate was gradually increased from the beginning of the growth and became stable. On the other hand the In composition of the grown crystal decreased along the growth direction. From the In composition, the temperature gradient in the solution was estimated and it was almost the same of that fixed during the growth.

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Defect and Diffusion Forum (Volumes 323-325)

Pages:

539-544

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.323-325.539

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Online since:

April 2012

Authors:

M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Yasunori Okano, Y. Inatomi, Yasuhiro Hayakawa

Keywords:

Alloy Semiconductor, Growth Striations, Microgravity, Solution Growth

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