Bulk Diffusion of Homovalent Atomic Probes of Vanadium and Niobium in Single Crystals of Tungsten

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The Volume Diffusion of Homovalent Atomic Probes (APs) from the VB Group of the Periodic Ta-Ble of Elements (PTE) – V and Nb in W Single Crystals Has Been Studied by Using the Method of Secondary Ion Mass Spectrometry (SIMS). the Parameters of the Arrhenius Dependence of the Coefficients DV of Vanadium Volume Diffusion in W Have Been Measured: (D0)V = (1.3  0.4) X 10-4 M2s-1 and QV = (564 ± 6) Kj/mol. the Parameters (D0,Q)Nb of the Bulk Diffusion of Nb Aps in W Have Been Estimated with the Help of Several Measured Coefficients Dnb and the Empirical Correlation [1,2]: (D = DWW)(Tm)W: the Diffusion Coefficients of Substitutional Non-Magnetic 5d-Aps Coincide with the Self-Diffusion Coefficients in W at its Melting Point (Tm)W. the Enthalpies Qnb,Ta of the Bulk Diffusion of Non-Magnetic (nm) Homovalent Aps from the VB Group of PTE – Nb and Ta [3] Also Coincide with the Relaxation Volumes vacVBAPs of Complexes “vacancies-VB Aps” in the W Lattice. Electron Contributions (EDN)vacVBAPs to the Energies Evacvbaps of Interaction of Point Defects in Complexes “vacancies- VB Nm- Aps” Are Lower than in Complexes “vacancies-IVB Nm- Aps” [4]. the Dependence of {EDN(n)}vacVBAPs the Electron Contributions (EDN)vacVBAPs on the Difference of N Numbers of Periods of PTE the Deviation of Contributions (EDN)vacVAPs for Vanadium Aps to En-Ergies Evacvaps of their Interaction in Complexes “vacancy-VAP” Has Been Determined. this Devi-Ation Is Conditioned by the Contribution of the Exchange Energy (Eexch)VAP of Vanadium to the En-Ergy Evacvaps of the Point-Defect Interactions in the Complex “vacancy-VAP”.

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September 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] G.E. Murch, Diffusion in Solids. Unresolved Problems. Trans Tech Publications, Zürich, (1992).

Google Scholar

[2] S. Klotsman, G. Tatarinova, A. Timofeev, Defect and Diffusion Forum, 305-306 (2010) 1.

Google Scholar

[3] N. Archipova, S. Klotsman, I. Polikarpova et al., Physical Review B, 30 (1984) 1788.

Google Scholar

[4] S. Klotsman, G. Tatarinova, A. Timofeev, Defect and Diffusion Forum, 319-320 (2011) 1.

Google Scholar

[5] U. Klemradt, D. Drittler, T. Hoshino, P. Dederichs, R. Zeller, Physical Review B, 43 (1991) 9487.

DOI: 10.1103/physrevb.43.9487

Google Scholar

[6] Diffusion in Solid Metals and Alloys, Ed.H. Mehrer, Berlin, Springer-Bornstein, (1990).

Google Scholar

[7] S. Klotsman, A. Timofeev, Physics of Metals and Metallography, 83 (1997) 86.

Google Scholar

[8] N. Papanikolaou, Z. Zeller, P.H. Dedwertichs, N. Stefanou, Physical Review B, 55 (1997) 4157.

Google Scholar

[9] S. Klotsman, S. Osetrov, A. Timofeev, Physics of Metals and Metallography, 81 (1996) 125.

Google Scholar

[10] N.K. Archipova, S.M. Klotsman, J. Rabovskyi, A. Timofeev, Physics of Metals and Metallography, 43 (1977) 779.

Google Scholar

[11] P.A. Korzhavyi, I. Abrikosov, B. Johanson, A.V. Ruban, H.L. Skriver: Physical Review B, 59 (1999) 11693.

Google Scholar

[12] V. Stepanyuk, W. Hergert, K. Wildberger, R. Zeller, P.H., Dederichs, Physical Review B, 55 (1996) 2121.

Google Scholar

[13] Zeller R., Computational Nanoscience, 31 (2006) 419.

Google Scholar

[14] Fähnle M., Schimmele L., Defect and Diffusion Forum, 237-240 (2005) 19.

Google Scholar