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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 425X-Rays Diffraction Study of InGaN/GaN...

X-Rays Diffraction Study of InGaN/GaN Heterostructures Grown by MOCVD Technique at Different Temperatures

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Abstract:

Indium gallium nitride / gallium nitride (InGaN/GaN) heterostructures were grown by using metal organic vapor deposition technique with four different growth temperatures (740 °C, 760 °C, 780 °C, and 800 °C). The structural properties and crystalline quality were investigated using high resolution X-ray diffraction (HRXRD) technique. XRD ω-2θ scan mode at GaN (002) diffraction plane was performed to assess the film’s quality. Through the simulation fitting, the indium composition and the thickness of the thin films were obtained. From the observation, an increase in the growth temperature resulted in higher intensity and smaller full-width at half maximum value of the InGaN (002) diffraction peak, which indicated improvement to the crystalline quality of the InGaN/GaN heterostructure. Moreover, the indium composition of the InGaN epilayer was found to decrease with an increase of the growth temperature due to the thermal decomposition of In-N bond and its re-evaporation from the growing surfaces.

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Periodical:

Defect and Diffusion Forum (Volume 425)

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9-14

DOI:

https://doi.org/10.4028/p-188z42

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Online since:

May 2023

Authors:

Aik Kwan Tan, Nur Atiqah Hamzah, Sha Shiong Ng*

Keywords:

III-V Nitrides, InGaN, MOCVD, Thin Film, Wide Bandgap Semiconductor

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© 2023 Trans Tech Publications Ltd. All Rights Reserved

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