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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 425Charge State Control over Point Defects in Sic...

Charge State Control over Point Defects in Sic Devices

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Abstract:

Point defects in silicon carbide (SiC) are well positioned for integration with SiC based quantum photonic devices due to the maturity of SiC material and fabrication technology, the plethora of candidate quantum emitters that can be formed in SiC, and the potential for emission over a wide spectral range from the visible to the infrared. However, for each of the available color centers in SiC, only one of the charge states has displayed quantum emission, meaning that the emission strongly depends on the Fermi level and hence the doping concentration in the material. In this contribution, we discuss the methodology and mechanism for electrical charge-state control over point defects in SiC devices.

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International Conference on Silicon Carbide and Related Materials ICSCRM 2022

Optical, Electronic and Special Materials

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Periodical:

Defect and Diffusion Forum (Volume 425)

Pages:

35-42

DOI:

https://doi.org/10.4028/p-6ho92o

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Cite this paper

Online since:

May 2023

Authors:

Marianne Etzelmüller Bathen*, Gard M. Selnesaunet, Marius Johan Enga, Snorre B. Kjeldby, Johanna Müting, Lasse Vines, Ulrike Grossner

Keywords:

Carbon Antisite-Vacancy Pair, Cathodoluminescence, Color Centers, Density Functional Theory, SiC, Silicon Vacancy

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