Study of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth Conditions

Tawhid Rana; Jun Wu; Gil Chung; Kevin Moeggenborg; Matthew Gave

doi:10.4028/p-72252k

Paper Titles

Charge State Control over Point Defects in Sic Devices
p.35

Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide
p.43

Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC
p.51

High Sensitivity Surface Defect Inspection of SiC and SmartSiC^TM Substrates Using a DUV Laser-Based System
p.57

Study of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth Conditions
p.63

S-EVC Method for Sorting Wafers with Defects that Extend to Bar Shaped SSFs
p.69

The Development of the Advanced Inspection System to Screen out the BPDs that Extend to Bar Shaped SSFs under Forward Biasing
p.75

Microstructure Investigation of Activated Carbon Prepared by Carbon Dioxide-Physical Activation
p.85

Preparation and Characterization of Nano Membrane for Fuel Cell
p.99

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 425Study of Defects in 4H-SiC Epitaxy at Various...

Study of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth Conditions

Abstract:

Buffer layer optimization is a critical technique to mitigate defect propagation from substrate to epilayer, reduce stress, and prevent generation of ingrown defects. In the present study, the impact of dopant transition from substrate to the buffer layer on various epilayer defects was investigated. It was found that a ramped transition of the dopant concentration from substrate to buffer layer is beneficial for reduction of basal plane dislocations in the epilayer compared to an abrupt doping transition. This reduction of defects can be attributed to reduced stress at the substrate-to-buffer layer transition. Tests on buffer layer growth rates also revealed that higher growth rates reduce BPDs (basal plane dislocations) in the epilayers. We believe that BPD conversion in epilayers grown at higher growth rates is energetically more favorable than the conversion at slower growth rates resulting in the observed reduced BPDs at higher growth rates.

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