High Sensitivity Surface Defect Inspection of SiC and SmartSiCTM Substrates Using a DUV Laser-Based System

Enrica Cela; Sam Shahidi; Prasant Parangi; Ramesh Shrestha; Gavin Simpson; Julie Widiez; Nicolas Daval; Audrey Chapelle; Séverin Rouchier; Walter Schwarzenbach

doi:10.4028/p-4918s1

Paper Titles

Indium Doped ZnO Thin Film Using Spin Coating for TCO Application
p.27

Charge State Control over Point Defects in Sic Devices
p.35

Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide
p.43

Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC
p.51

High Sensitivity Surface Defect Inspection of SiC and SmartSiC^TM Substrates Using a DUV Laser-Based System
p.57

Study of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth Conditions
p.63

S-EVC Method for Sorting Wafers with Defects that Extend to Bar Shaped SSFs
p.69

The Development of the Advanced Inspection System to Screen out the BPDs that Extend to Bar Shaped SSFs under Forward Biasing
p.75

Microstructure Investigation of Activated Carbon Prepared by Carbon Dioxide-Physical Activation
p.85

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 425High Sensitivity Surface Defect Inspection of SiC...

High Sensitivity Surface Defect Inspection of SiC and SmartSiC^TM Substrates Using a DUV Laser-Based System

Abstract:

SmartSiC^TM technology enables the supply of cost-effective and high-quality substrates to support the manufacturing of Silicon Carbide (SiC) Power Devices and the transition to High Volume Manufacturing (HVM) [1]. As detailed in [2] SmartSiC^TM is prepared using a poly-crystalline handle wafer, it combines the benefit from both an optimized high quality epi-ready 4H-SiC layer and an ultra high conductivity handle material. Smart Cut^TM technology can be extended to SiC 200mm substrates and first SmartSiC^TM 200mm sample has been prepared [2].SmartSiC^TM substrates crystal quality is inherited by donor wafers [1, 2] and do not require a systematic control, enabling a new defects monitoring strategy, focusing on surface defects.This paper describes how a commercially available DUV inspection system was utilized for high sensitivity, high-throughput inspections of 150 and 200 mm 4H-SiC and SmartSiC^TM substrates, for the HVM environment. The KLA Surfscan^® SP A2 unpatterned wafer inspection system offers the opportunity to complement other inspection technologies to optimize SiC substrate defect control, with low threshold detection, below 150 nm.