Paper Titles

Point Defects and Diffusion in Silicon and Gallium Arsenide
p.1

Diffusion and Low Temperature Deformation by Diffusional Creep of Nanocrystalline Materials
p.17

Dopant and Ion Beam Enhanced Grain Growth in Polycrystalline Silicon Films
p.33

Interface Segregation and Cohesion
p.47

Oxidation of High Technology Materials
p.63

Interstitial-Substitutional Diffusion in Group III-V and Group IV Semiconductors: The Role of Dislocations
p.79

Diffusion Barriers - For Thin Film Metallizations
p.99

Contact Metallization for GaAs - A Report on the Development of a Non-Alloyed Ohmic Contact Scheme
p.111

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 59Point Defects and Diffusion in Silicon and Gallium...

Point Defects and Diffusion in Silicon and Gallium Arsenide

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Diffusion Processes in High Technology Materials

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Periodical:

Defect and Diffusion Forum (Volume 59)

Pages:

1-16

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.59.1

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Online since:

January 1988

Authors:

U.M. Gösele, T.Y. Tan

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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