Paper Titles

Point Defects and Diffusion in Silicon and Gallium Arsenide
p.1

Diffusion and Low Temperature Deformation by Diffusional Creep of Nanocrystalline Materials
p.17

Dopant and Ion Beam Enhanced Grain Growth in Polycrystalline Silicon Films
p.33

Interface Segregation and Cohesion
p.47

Oxidation of High Technology Materials
p.63

Interstitial-Substitutional Diffusion in Group III-V and Group IV Semiconductors: The Role of Dislocations
p.79

Diffusion Barriers - For Thin Film Metallizations
p.99

Contact Metallization for GaAs - A Report on the Development of a Non-Alloyed Ohmic Contact Scheme
p.111

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 59Dopant and Ion Beam Enhanced Grain Growth in...

Dopant and Ion Beam Enhanced Grain Growth in Polycrystalline Silicon Films

Article Preview

Abstract:

You might also be interested in these eBooks

Diffusion Processes in High Technology Materials

Info:

Periodical:

Defect and Diffusion Forum (Volume 59)

Pages:

33-46

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.59.33

Citation:

Cite this paper

Online since:

January 1988

Authors:

C.V. Thompson

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1988 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: