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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 95-98Study of Diffusion of Copper in Silicon Doped...

Study of Diffusion of Copper in Silicon Doped Gallium Arsenide Using Photoinduced current Transient Sprectroscopy for Deep Level Characterization

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Diffusion in Materials - DIMAT 1992

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Periodical:

Defect and Diffusion Forum (Volumes 95-98)

Pages:

931-936

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.95-98.931

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Cite this paper

Online since:

January 1993

Authors:

L.M. Thomas, V.K. Lakdawala

Keywords:

Copper Diffusion in Si, GaAs switch, PICTS, Silicon Doped GaAs

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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