Study of Diffusion of Copper in Silicon Doped Gallium Arsenide Using Photoinduced current Transient Sprectroscopy for Deep Level Characterization

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Periodical:

Defect and Diffusion Forum (Volumes 95-98)

Edited by:

M. Koiwa, K. Hirano, H. Nakajima and T. Okada

Pages:

931-936

DOI:

10.4028/www.scientific.net/DDF.95-98.931

Citation:

L.M. Thomas and V.K. Lakdawala, "Study of Diffusion of Copper in Silicon Doped Gallium Arsenide Using Photoinduced current Transient Sprectroscopy for Deep Level Characterization", Defect and Diffusion Forum, Vols. 95-98, pp. 931-936, 1993

Online since:

January 1993

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$35.00

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