Paper Titles

Study of Diffusion of Copper in Silicon Doped Gallium Arsenide Using Photoinduced current Transient Sprectroscopy for Deep Level Characterization
p.931

Reactions in Epitaxially Grown Films of Hg_1-xCd_xTe
p.937

Volume Diffusion of Gold in Polycrystalline Silicon
p.943

Diffusion of Implanted Tellurium-121 into Silicon
p.949

Basic Condition for the Pair Diffusion Model of Group V Impurities in Silicon
p.955

Behavior of Self-Interstitials and Vacancies in Silicon
p.961

B Diffusion in Si Predamaged with Si⁺, C⁺ and Ge⁺ Implantation
p.967

Implantation and Migration of Gold Atoms in Silicon Induced by MeV Electron Irradiation
p.973

Tem Studies on the Interdiffusion of In_xGa_1-xAs/GaAs/Si Heterostructure
p.977

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 95-98Basic Condition for the Pair Diffusion Model of...

Basic Condition for the Pair Diffusion Model of Group V Impurities in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Diffusion in Materials - DIMAT 1992

Info:

Periodical:

Defect and Diffusion Forum (Volumes 95-98)

Pages:

955-960

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.95-98.955

Citation:

Cite this paper

Online since:

January 1993

Authors:

M. Yoshida

Keywords:

Diffusion in Silicon, e-Centre, Group V Impuritiy, Pair Diffusion Model, Phosphorus Atom, Self-Interstitial, Vacancy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: