Basic Condition for the Pair Diffusion Model of Group V Impurities in Silicon

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Periodical:

Defect and Diffusion Forum (Volumes 95-98)

Edited by:

M. Koiwa, K. Hirano, H. Nakajima and T. Okada

Pages:

955-960

DOI:

10.4028/www.scientific.net/DDF.95-98.955

Citation:

M. Yoshida "Basic Condition for the Pair Diffusion Model of Group V Impurities in Silicon", Defect and Diffusion Forum, Vols. 95-98, pp. 955-960, 1993

Online since:

January 1993

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$35.00

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