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B Diffusion in Si Predamaged with Si⁺, C⁺ and Ge⁺ Implantation
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Implantation and Migration of Gold Atoms in Silicon Induced by MeV Electron Irradiation
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 95-98B Diffusion in Si Predamaged with Si+, C+ and Ge+...

B Diffusion in Si Predamaged with Si⁺, C⁺ and Ge⁺ Implantation

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Diffusion in Materials - DIMAT 1992

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Periodical:

Defect and Diffusion Forum (Volumes 95-98)

Pages:

967-972

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.95-98.967

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Online since:

January 1993

Authors:

Masataka Kase, Yoshio Kikuchi, Y. Kataoka, Hirotaro Mori

Keywords:

Boron Diffusion in Si, C, Ge, Ion Implantation, Transient Enhanced Diffusion

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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