Paper Titles

Behavior of Self-Interstitials and Vacancies in Silicon
p.961

B Diffusion in Si Predamaged with Si⁺, C⁺ and Ge⁺ Implantation
p.967

Implantation and Migration of Gold Atoms in Silicon Induced by MeV Electron Irradiation
p.973

Tem Studies on the Interdiffusion of In_xGa_1-xAs/GaAs/Si Heterostructure
p.977

Strain Effect on Recombination-Enhanced Diffusion of Be in GaAs
p.983

Amorphization and Solid Phase Epitaxial Growth in Ion Implanted III-V Compound Semiconductors
p.989

Deep Level Transient Spectroscopic Analysis of Annealing Process of Iron Ion Implanted Gallium Arsenide
p.995

Low-Temperature Diffusion of Hydrogen and the Roles of Defects in Silicon
p.1001

Diffusion Measurement for Liquid Pb_(1-x)Sn_xTe under Microgravity -Texus 26 Rocket Experiment-
p.1007

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 95-98Strain Effect on Recombination-Enhanced Diffusion...

Strain Effect on Recombination-Enhanced Diffusion of Be in GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Diffusion in Materials - DIMAT 1992

Info:

Periodical:

Defect and Diffusion Forum (Volumes 95-98)

Pages:

983-988

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.95-98.983

Citation:

Cite this paper

Online since:

January 1993

Authors:

Masashi Uematsu, K. Wada

Keywords:

Be Diffusion in GaAs, Recombination-Enhanced Impurity Diffusion, Strain Effect

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: