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Deep Level Transient Spectroscopic Analysis of Annealing Process of Iron Ion Implanted Gallium Arsenide

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Periodical:

Defect and Diffusion Forum (Volumes 95-98)

Pages:

995-1000

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.95-98.995

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Online since:

January 1993

Authors:

M. Taniwaki, H. Koide, Yasunori Hayashi

Keywords:

Deep-Level Transient Spectroscopy, Fe-Implantation, GaAs

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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