The Formation of Porous Silicon Using Vertical Photoelectrochemical Method with Laser Energy Variation

Abstract:

Due to its notable characteristics, porous silicon (PSi) has become the main focus in silicon upgrades for optoelectronics, medical, and sensor applications. Here, successful vertical photoelectrochemical fabrication of PSi based on crystalline silicon n-type wafers with orientation (100) has been accomplished. Silicon surfaces were anodized for 10 min in a solution of hydrofluoric acid and ethanol at a ratio of 1:3 and a current density of 4 mA/cm² under laser illumination. Illumination sources were red, green, and purple laser beams with energies of 1.91 eV, 2.33 eV, and 3.06 eV, respectively, conducted to observe the effects on PSi microstructures and optical properties. The pores formed on the silicon surface were characterized via SEM, XRD, FTIR, and UV-Vis DRS Spectrophotometer. SEM analysis showed pore size distributions of 2.130, 3.353, and 1.078 mm for PSi samples with red, green, and purple lasers, respectively. XRD investigation revealed diffraction angles of 33.14° and 69.47° belonging to (211) and (422) planes, respectively, corresponding to the PSi. For samples of silicon and PSi with red, green, and purple lasers, the crystallite size and crystallinity were 168.55 nm and 44.80%, 25.02 nm and 17.12%, 29.19 nm and 23.56%, and 145.05 nm and 35.17%, respectively. FTIR observation confirmed that the PSi surface contained chemical bonds of Si-Si, Si-H, Si-H₂, Si-O-Si, and C=O. UV-Vis DRS examination revealed the reflectance spectrum oscillation, indicating that lasers caused pore formation in PSi with bandgap energies of between 1 and 2 eV.

• Periodical: Diffusion Foundations and Materials Applications (Volume 36)
• Pages: 47-54
• DOI: https://doi.org/10.4028/p-c4FgCT
• Online since: November 2024
• Authors: Risa Suryana*, Tasya Az-Zahra Setyorini, Markus Diantoro
• Keywords: Laser Energy, Porous Silicon, Vertical Photoelectrochemical

References

[1] H.R. Abd, Y.Al-Douri, N.M. Ahmed, U. Hashim, Alternative-current electrochemical etching of uniform porous silicon for photodetector applications, Int. J. Electrochem. Sci., 8(9) (2013) 11461–11473.

DOI: 10.1016/s1452-3981(23)13197-x

[2] M. Kopani, M. Mikula, D. Kosnac, J. Kovac, M. Trnka, J. Gregus, M. Jerigova, M. Jergelf, E. Vavrinsky, S. Bacova, P. Zitto, S. Polak, E. Pincik, Effect of etching time in hydrofluoric acid on the structure and morphology of n-type porous silicon, Appl. Surf. Sci., 532 (2020)147463.

DOI: 10.1016/j.apsusc.2020.147463

[3] B.E.B. Al-Jumaili, Z.A. Talib, A. Ramizy, N.M. Ahmed, L.Y. Josephine, S.B. Paiman, I.B. Muhd, S.A. Abdulateef, Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector, J. Nanomater. (2016)1–8.

DOI: 10.1155/2016/1890364

[4] K.A. Salman, K. Omar, Z. Hassan, The effect of etching time of porous silicon on solar cell performance, Superlattices Microstruc. 50 (2011) 647–658.

DOI: 10.1016/j.spmi.2011.09.006

[5] N.M. Ahmed, Y. Al-Douri, A.M. Alwan, A.A. Jabbar, G.A. Arif, Characteristics of nanostructure silicon photodiode using laser assisted etching, Procedia Eng., 53 (2013) 393–399.

DOI: 10.1016/j.proeng.2013.02.051

[6] N. Jeyakumaran, B. Natarajan, S. Ramamurthy, V. Vasu, Structural and optical of n-type porous silicon-effect of etching time, Int. J. Nanosci. Nanotechnol., 3(1) (2007) 45–51.

[7] M. Das, D. Sarkar, Structural and optical properties of n-type porous silicon fabricated in dark, Indian J. Pure Appl. Phys., 51 (2013) 724–727.

[8] F.A. Abd Rahim, M.R. Hashim, N.K. Ali, High sensitivity of palladium on porous silicon MSM photodetector, Physica B: Condensed Matter, 406 (4) (2011) 1034–1037.

DOI: 10.1016/j.physb.2010.12.056

[9] N.F. Habubi, R.A. Ismail, A.N. Abd, W.K. Hamoudi, Improved photoresponse of porous silicon photodetectors by embedding CdSe nanoparticles, Indian J. Pure Appl. Phys., 53 (2015) 718–724.

[10] B.E.B. Al-Jumaili, Z.A. Talib, A. Ramizy, N.M. Ahmed, L.Y. Josephine, S.B. Paiman, I.B. Muhd, S.A. Abdulateef, Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector, Journal of Nanomaterials 2016 (2016).

DOI: 10.1155/2016/1890364

[11] N. Naderi, M.R. Hashim, Effect of surface morphology on electrical properties of electrochemically-etched porous silicon photodetectors, Int. J. Electrochem. Sci., 7 (2012) 11512 – 11518.

DOI: 10.1016/s1452-3981(23)16962-8

[12] M. Das, D. Sarkar, Morphological and optical properties of n-type porous silicon: effect of etching current density, Bull. Mater. Sci., 39(7) (2016), 1671–1676.

DOI: 10.1007/s12034-016-1332-6

[13] R. Suryana, D.K. Sandi, O. Nakatsuka, The morphological study of porous silicon formed by electrochemical anodization method, IOP Conf. Ser.: Mater. Sci. Eng., 333 (2018) 012034.

DOI: 10.1088/1757-899x/333/1/012034

[14] S.M. Faraj, S.M. Abd Al-Baqi, N.R. Jber, J. Fisher, Porous silicon morphology: photo-electrochemically etched by different laser wavelengths, J. Nanotechnol. Eng. Med., 6(1) (2015) 011003.

DOI: 10.1115/1.4030768

[15] R. Suryana, N.Q. Aini, Analysis of porous silicon formation on n-type Si (100) using laser-assisted electrochemical anodization method, Journal of Physics and Its Applications 4(2) (2022) 28–32.

DOI: 10.14710/jpa.v4i2.12664

[16] O. Bisia, S. Ossicinib, L. Pavesi, Porous silicon: a quantum sponge structure for silicon based optoelectronics, Surf. Sci. Rep., 38(1-3) (2000) 1-126.

DOI: 10.1016/s0167-5729(99)00012-6

[17] S.Z. Sze, K.N. Kwok, Physics of Semiconductor Devices, (John Wiley & Sons, 2007).

[18] Y.H. Ogata, Handbook of Porous Silicon, in: L. Canham (Ed.), Characterization of porous silicon by infrared spectroscopy, Springer International Publishing, Kyoto, 2014, p.473–480.

DOI: 10.1007/978-3-319-05744-6_48

[19] J. Xu, S. Liu, Y. Yang, J. Li, C. Tian, L. Guo, S. Zhang, Y. Liu, Z. Zhong, Preparation of porous silicon by electrochemical etching methods and its morphological and optical properties, Int. J. Electrochem. Sci.,14 (2019) 5188–5199.

DOI: 10.20964/2019.06.10

[20] S.T. Kassim, H. Hadi, Illuminations condition effect on optical properties of nanocrystalline porous silicon, EasyChair Preprint 3284 (2020).

[21] A.Z. Abdullah, A.J. Haider, A.A. Jabbaar, Fabrication of porous silicon as a gas sensor: the role of porous silicon surface morphology, J. Nanosci. Nanotechnol., 2(4) (2022) 35–42.

DOI: 10.53293/jasn.2022.4661.1134