Controlled Synthesis and Electrical Properties Study of GeAs₂Te₄ Single Crystals

Abstract:

Exploration of the optoelectronic memristor is required to investigate the photoelectric properties of materials. The traditional memristor material GeAs₂Te₄ is hopeful to be developed into a new type of optoelectronic memristor. However, acquiring high-quality single crystals remains challenging, and the electrical properties of single crystals of GeAs2Te4 need to be explored. Herein, a controlled method is introduced to grow reliable quality GeAs₂Te₄ single crystals, and the electrical and optoelectronic properties are studied. The photodetector based on GeAs₂Te₄ exhibits acceptable optoelectronic performance at designed low temperatures. The responsivity and detectivity of the GeAs₂Te₄-based photodetector reached the value of about 0.137 A W^-1 and 6.9×10⁷ Jones, respectively. It is promising to introduce this family of materials into the field of photodetector and also maybe further in the area of optoelectronic memristors.

• Periodical: Journal of Metastable and Nanocrystalline Materials (Volume 37)
• Pages: 23-32
• DOI: https://doi.org/10.4028/p-aab8AN
• Online since: July 2023
• Authors: Meng Xi Yu, Jia Wang Chen, Yu Chen Du, Wang Zi Han, Ming Mei, Xiang De Zhu, Liang Li*
• Keywords: Electrical Properties, GeAs₂Te₄, Phase Change Materials, Photodetector, Single Crystals Synthesis

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