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HomeJournal of Nano ResearchJournal of Nano Research Vol. 17Al-Free Nanolayered Metallization Systems for...

Al-Free Nanolayered Metallization Systems for Sub-Micron HEMTs

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Abstract:

Al-Free Nanolayered Metallizations Based on the Transition Metals Ti, Mo, Ni and Pd, with Varied Ti Content, Have Been Developed as an Alternative of the Al-Based Contacts for Sub-Micron Hemts. the Electrical, Morphological and Thermal Properties of the Metallization Schemes Have Been Studied with the Aim of Obtaining the Most Suitable Combination of Low Resistivity, a Smooth Surface and an Acute Edge. the Lowest Resistivity of 8.8x 10-6 Ω.cm2 Has Been Determined with the Ti/Mo/Ti/Au Contact, while the Lowest Surface Roughness of 6 Nm Has Been Measured for the Ti/Ni/Ti/Au Metallization. these Contact Schemes Have Shown much Better Edge Acuity in Comparison to the Al-Based Metallizations.

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Journal of Nano Research Vol. 17

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Periodical:

Journal of Nano Research (Volume 17)

Pages:

203-210

DOI:

https://doi.org/10.4028/www.scientific.net/JNanoR.17.203

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Online since:

February 2012

Authors:

Lilyana Kolaklieva, V. Chitanov, Roumen Kakanakov

Keywords:

AlGaN/GaN, Atomic Force Microscopy (AFM), Contact Resistivity, Edge Acuity, HEMT, Ohmic Contact, Scanning Electron Microscope (SEM), Surface Morphology, TLM

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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