Influence of Interface Traps on the Electrical Properties of Oxide Thin-Film Transistors with Different Channel Thicknesses

Abstract:

The electrical properties of bottom-gate amorphous InSnZnO (a-ITZO) thin-film transistors (TFTs) with different channel thicknesses (TITZO) were investigated. The difference between front- and back-channel interface traps influence on subthreshold swing (S) and turn on voltage (Von) of a-ITZO TFTs was further analyzed using device simulation. Variations of front-channel interface traps (Naf) on S and Von were hardly dependent on TITZO. However, variations of S and Von became larger for thinner TITZO TFT when back-channel interface traps (Nabk) varied; which can be explained by considering screening length. Not only Naf but also Nabk are important factors of S and Von to achieve high performance thinner oxide TFT.

• Periodical: Journal of Nano Research (Volume 46)
• Pages: 93-99
• DOI: https://doi.org/10.4028/www.scientific.net/JNanoR.46.93
• Online since: March 2017
• Authors: Jing Xin Jiang*, Da Peng Wang, Tokiyoshi Matsuda, Mutsumi Kimura, Sheng Yang Liu, Mamoru Furuta
• Keywords: Amorphous InSnZnO, Back-Channel Interface Traps, Density of States (DOS), Device Simulation, Front-Channel Interface Traps, Thin-Film Transistors

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