The Conditions of Formation of the Uniform-Sized Quantum Dots in the Field of an Ultrasonic Wave

Abstract:

The non-linear diffusion-deformation theory of self-organization of nanoclusters of dot defects in semiconductor exposed to ultrasound treatment that considers the interaction of defects among themselves and with atoms of a matrix via the elastic field created by dot defects and an acoustic wave is developed. Within this theory the influence of ultrasound on the conditions of formation of spherical nanoclusters and their radius is investigated. The nanocluster size depending on average concentration of defects and amplitude of an acoustic wave is determined. It is established that ultrasonic treatment of the semiconductor in the process of formation of an ensemble of nanoclusters leads to reduction of dispersion of their sizes. In the framework of this model, a possibility of the ultrasound-stimulated the size dispersion reduction of strained InAs/GaAs quantum dots doped with an isovalent impurity are analyzed.

• Periodical: Journal of Nano Research (Volume 57)
• Pages: 40-50
• DOI: https://doi.org/10.4028/www.scientific.net/JNanoR.57.40
• Online since: April 2019
• Authors: Roman Peleshchak*, Oleh Kuzyk, Olesya Dan'kiv
• Keywords: Deformation, Diffusion, Quantum Dots, Ultrasonic Wave

References

[1] V.A. Zinovyev, A.V. Dvurechenskii, P.A. Kuchinskaya, V.A. Armbrister, S.A. Teys, A.A. Shklyaev and A.V. Mudryi, Nucleation and growth of ordered groups of SiGe quantum dots, Semiconductors 49 (2015) 149 – 153.

DOI: 10.1134/s1063782615020256

[2] V.I. Conrad, A.D. Greentree and L.C.L. Hollenberg, Multiplexing single electron transistors for application in scalable solid-state quantum computing, Appl. Phys. Lett. 90 (2007) 043109.

DOI: 10.1063/1.2435335

[3] J.O. Kim, S. Sengupta, A.V. Barve, Y.D. Sharma, S. Adhikary, S.J. Lee et al, Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors, Appl. Phys. Lett. 102 (2013) 011131.

DOI: 10.1063/1.4774383

[4] E. Sadeghi, Optical nutation in multilayered ellipsoidal quantum dots, Phys. E: Low-dimen. syst. and nanostr. 73 (2015) 1 – 6.

DOI: 10.1016/j.physe.2015.05.015

[5] T. Kawazu, Optical anisotropy of InGaAs quantum dot arrays aligned along multiatomic steps on vicinal GaAs(111)B, Journal of Applied Physics 122 (2017) 204304.

DOI: 10.1063/1.4996058

[6] Y. Huang, Y. Puttisong, I.A. Buyanova, W.M. Chen, Understanding and optimizing spin injection in self-assembled InAs/GaAs quantum-dot molecular structures, Nano Research 9 (2016) 602 – 611.

DOI: 10.1007/s12274-015-0940-6

[7] R.M. Peleshchak, S.K. Guba, O.V. Kuzyk, I.V. Kurilo, O.O. Dan'kiv, Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices, Semiconductors 47 (2013) 349 – 353.

DOI: 10.1134/s1063782613030196

[8] V.G. Dubrovskii, G.E. Cirlin, V.M. Ustinov, Kinetics of the initial stage of coherent island formation in heteroepitaxial systems, Physical Review B 68 (2003) 075409.

DOI: 10.1103/physrevb.68.075409

[9] J.R. Gell, M.B. Ward, R.J. Young, R.M. Stevenson, P. Atkinson, D. Anderson, G.A.C. Jones, D.A. Ritchie, A.J. Shields, Modulation of single quantum dot energy levels by a surface-acoustic-wave, Applied Physics Letters 93 (2008) 081115.

DOI: 10.1063/1.2976135

[10] R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv, Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation, Cond. Mat. Phys. 18 (2015) 43801.

DOI: 10.5488/cmp.18.43801

[11] W. Yang, B. Zhang, N. Ding, W. Ding, L. Wang, M. Yu, Q. Zhang, Fast synthesize ZnO quantum dots via ultrasonic method, Ultrasonics Sonochemistry 30 (2016) 103 – 112.

DOI: 10.1016/j.ultsonch.2015.11.015

[12] B.N. Zvonkov, I.A. Karpovich, N.V. Baidus, D.O. Filatov, S.V. Morozov, Influence of bismuth doping of InAs quantum-dot layer on the morphology and photoelectronic properties of Gas/InAs heterostructures grown by metal-organic chemical vapor deposition, Semiconductors 35 (2001) 93 – 98.

DOI: 10.1134/1.1340297

[13] T. Kaizu, K. Taguchi, T. Kita, Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells, Journal of Applied Physics 119 (2016) 194306.

DOI: 10.1063/1.4951719

[14] Z. Mao, H. Lin, M. Xu, et al., Fabrication of co-doped CdSe quantum dot-sensitized TiO2 nanotubes by ultrasound-assisted method and their photoelectrochemical properties, J. Appl. Electrochem. 48 (2017) 147 – 155.

DOI: 10.1007/s10800-017-1138-2

[15] R.M. Peleshchak, O.O. Dan'kiv, O.V. Kuzyk, Modulation of the direction of radiation emitted by an InAs/GaAs heterolaser with InAs quantum dots under the influence of acoustic wave, Ukr. J. Phys. 57 (2012) 68 – 72.

DOI: 10.30970/jps.14.4402

[16] H. Gao, C. Xue, G. Hu, K. Zhu, Production of graphene quantum dots by ultrasound-assisted exfoliation in supercritical CO2/H2O medium, Ultrasonics Sonochemistry 37 (2017) 120 – 127.

DOI: 10.1016/j.ultsonch.2017.01.001

[17] R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv, Influence of deformation effects on electrical properties of metal-semiconductor-doped semiconductor structure, Ukr. J. Phys. 55 (2010) 434 – 439.

[18] N.N. Ledentsov, V.M. Ustinov, V.A. Shchukin, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg, Quantum dot heterostructures: Fabrication, properties, lasers, Semiconductors 32 (1998) 343 – 365.

DOI: 10.1134/1.1187396

[19] A. Luque, S. Hegedus, Handbook of Photovoltaic Science and Engineering, John Wiley & Sons, Ltd : England, (2003).