Dependence of Tetrahedral Bond Lengths on the Surface Passivation and Stacking-Fault Density of CdSe Nanocrystals

Abstract:

We have investigated the surface effect of colloidally prepared CdSe nanocrystals (NCs) with the size range of 23-40 Å on their structural properties by changing the organic capping ligands. The TOPO/HDA-passivated NCs reveal a size-dependent behavior involving an elongated axial bond R⁽¹⁾ of an atomic tetrahedron and a shrunken equatorial bonds R⁽²⁾. After treatment of the NCs with pyridine, the bond length R⁽¹⁾ decreases significantly whereas R⁽²⁾ remains unchanged relative to the TOPO/HDA-passivated NCs, suggesting that a tensile stress along the [001] direction is contributed from the surface modification. In addition, we find that the expansion ratio of the pyridine-treated NCs along the c axis depends strongly on the density of stacking faults, which provides an evidence for the relaxation of atomic positions near the interface of stacking faults.

• Periodical: Journal of Nano Research (Volume 57)
• Pages: 58-67
• DOI: https://doi.org/10.4028/www.scientific.net/JNanoR.57.58
• Online since: April 2019
• Authors: Pin Jiun Wu*, Yuri P. Stetsko, Meng Ting Hsieh
• Keywords: CdSe Nanocrystals, Extended X-Ray Absorption Fine Structure, Stacking Fault, Synchrotron Radiation, Tetrahedral, X-Ray Diffraction

References

[1] M. C. Schlamp, X. G. Peng, A. P. Alivisatos, J. Appl. Phys. 82 (1997) 5837.

[2] H. Mattoussi, L. H. Radzilowski, B. O. Dabbousi, E. L. Thomas, M. G. Bawendi, M. F. Rubner, J. Appl. Phys. 83 (1998) 7965.

[3] M. J. Bowers, J. R. McBride, S. J. Rosenthal, J. Am. Chem. Soc. 127 (2005) 15378.

[4] M. Bruchez, M. Moronne, P. Gin, S. Weiss, A. P. Alivisatos, Science 281 (1998) (2013).

[5] W. C. W. Chan and S. M. Nie, Science 281 (1998) (2016).

[6] Y. Champion, F. Bernard, N. Millot, P. Perriat, Appl. Phys. Lett. 86 (2005) 231914.

DOI: 10.1063/1.1947887

[7] R. W. Meulenberg, T. Jennings, G. F. Strouse, Phys. Rev. B 70 (2004) 235311.

[8] A. Marbeuf, M. Barbe, A. Ramos, C. Levelut, S. Wszolek, Acta Cryst. B50 (1994) 326.

[9] K. Suzuki, M. Ichihara, S. Takeuchi, Jpn. J. Appl. Phys. 33 (1994) 1114.

[10] P. J. Wu, Y. P. Stetsko, K. D. Tsuei, R. Dronyak, K. S. Liang, Appl. Phys. Lett. 90 (2007) 161911.

DOI: 10.1063/1.2727559

[11] C. B. Murray, D. J. Norris, M. G. Bawendi, J. Am. Chem. Soc. 115 (1993) 8706.

[12] P. Reiss, J. Bleuse, A. Pron, Nano Lett. 2 (2002) 781.

[13] E. A. Stern, M. Newville, B. Ravel, D. Haskel, Physica B 208-209 (1995) 117.

[14] S. I. Zabinsky, J. J. Rehr, A. Ankudinov, R. C. Albers, M. J. Eller, Phys. Rev. B 52 (1995) 2995.

[15] A. Guinier, X-ray Diffraction in Crystals, Imperfect Crystals and Amorphous Bodies, Freeman, San Francisco, 1963, p.49–51.

DOI: 10.1126/science.142.3599.1564

[16] M. G. Bawendi, A. R. Kortan, M. L. Steigerwald, L. E. Brus, J. Chem. Phys. 91 (1989) 7282.

[17] C. Kumpf, R. B. Neder, F. Niederdraenk, P. Luczak, A. Stahl, M. Scheuermann, S. Joshi, S. K. Kulkarni, C. Barglik-Chory, C. Heske, E. Umbach, J. Chem. Phys. 123 (2005) 224707.

DOI: 10.1063/1.2129369

[18] A. C. Carter, C. E. Bouldin, K. M. Kemmer, M. I. Bell, J. C. Woicik, S. A. Majetich, Phys. Rev. B 55 (1997) 13822.

[19] B. Gilbert, H. Zhang, F. Huang, J. F. Banfield, Y. Ren, D. Haskel, J. C. Lang, G. Srajer, A. Jürgensen, G. A. Waychunas, J. Chem. Phys. 120 (2004) 11785.

DOI: 10.1063/1.1752890

[20] C. Y. Yeh, Z. W. Lu, S. Froyen, A. Zunger, Phys. Rev. B 46 (1992) 10086.

[21] P. Perriat, J. C. Niepce, High Temp. Chem. Processes 3 (1994) 585.

[22] S. Banerjee, S. Jia, D. I. Kim, R. D. Robinson, J. W. Kysar, J. Bevk, I. P. Herman, Nano Lett. 6 (2006) 175.

[23] B. S. Kim, M. A. Islam, L. E. Brus, I. P. Herman, J. Appl. Phys. 89 (2001) 8127.

[24] J. A. Majewski, P. Vogl, MRS Internet J. Nitride Semicond. Res. 3 (1998) 21.

[25] R. P. Reed, R. E. Schramm, J. Appl. Phys. 45 (1974) 4705.

[26] J. A. Chisholm, P. D. Bristowe, J. Phys.: Condens. Matter, 11 (1999) 5057.