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HomeJournal of Nano ResearchJournal of Nano Research Vol. 60Dielectrophoretic Assembly of Aluminum Nitride...

Dielectrophoretic Assembly of Aluminum Nitride (AlN) Single Nanowire Deep Ultraviolet Photodetector

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Abstract:

High UV-light sensitivity, fast response, and low power consumption are the most important features of nanowire-based devices for new applications in photodetectors, optical switches, and image sensors. Single AlN nanowire deep ultraviolet (UV) photodetector has been fabricated utilizing very high-quality AlN nanowires through a very practical dielectrophoretic assembly scheme. The low-voltage (≤ 3 V) operating UV photodetector has selectively shown a high photocurrent response to the 254 nm UV light. Furthermore, the photocurrent transients have been modelled to determine the rise and decay time constants as 7.7 s and 11.5 s, respectively. In consequence, combination of deep UV light selectivity and low voltage operation make AlN nanowires great candidates for the development of compact deep UV photodetectors.

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Journal of Nano Research Vol. 60

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Periodical:

Journal of Nano Research (Volume 60)

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86-93

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https://doi.org/10.4028/www.scientific.net/JNanoR.60.86

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Online since:

November 2019

Authors:

Kasif Teker*

Keywords:

AlN Nanowires, Deep-UV Photodetectors, Low-Voltage Operation, Nanoscale UV-Sensors

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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