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HomeJournal of Nano ResearchJournal of Nano Research Vol. 61Numerical Study of Long Channel Carbon Nanotube...

Numerical Study of Long Channel Carbon Nanotube Based Transistors by Considering Variation in CNT Diameter

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Abstract:

While much numerical studies have been done on short channel carbon nanotube field effect transistors (CNT-FETs), there are only a few numerical reports on long channel devices. Long channel CNT-FETs have been widely used in chemical sensors and biosensors as well as light emitters. Therefore, numerical study is helpful for a better understanding of the behavior of such devices. In this paper, we numerically analyze long-channel CNT-FETs by solving the continuity and charge equations self-consistently. To increase the accuracy of simulation, filed-dependent mobility is applied to the equations. Furthermore, a method is proposed to obtain the electrical current of transistors as a function of CNT diameter. Obtained results are in good agreement with the previous experimental data. It is found that compared to a CNT-based resistor, the dependence of current on diameter is much higher in a CNT-FET. Finally, reproducibility of transistors based on the arrays of random CNTs of 1-2 nm diameter in terms of the CNTs number is also investigated.

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Journal of Nano Research Vol. 61

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Periodical:

Journal of Nano Research (Volume 61)

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78-87

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https://doi.org/10.4028/www.scientific.net/JNanoR.61.78

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Online since:

February 2020

Authors:

Sajjad Dehghani*

Keywords:

Carbon Nanotube, Long Channel CNT-FET, Numerical Analysis, Reproducibility

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© 2020 Trans Tech Publications Ltd. All Rights Reserved

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