Paper Titles

LiNbO₃ Thin Films prepared from a Polymeric Precursor Method
p.1143

SAW Materials and Devices Characterization of High Resolution and Accuracy
p.1147

Fabrication Processes of Magnetic and Dielectric Multilayer Ceramics
p.1151

Grain Boundary Structures in Electronic Ceramics
p.1155

Valence States of MgO, AI₂O₃ and Metal-Oxide Interfaces
p.1159

Ceramic Micropackages Realised through the Technology. Specific to Electronic Components
p.1163

Effect of NiO on the Sintering Behaviour of BaTiO₃
p.1167

Dielectric Properties of NiO-Doped BaTiO₃ sintered with different Oxygen Partial Pressure
p.1171

Evolution of Hysteresis Loops with Temperature Studied on Dielectric Ceramics Based on Tetragonal Tungsten Bronze Structure
p.1175

HomeKey Engineering MaterialsKey Engineering Materials Vols. 132-136Valence States of MgO, AI2O3 and Metal-Oxide...

Valence States of MgO, AI₂O₃ and Metal-Oxide Interfaces

Article Preview

Abstract:

You might also be interested in these eBooks

Euro Ceramics V

Info:

Periodical:

Key Engineering Materials (Volumes 132-136)

Pages:

1159-1162

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.132-136.1159

Citation:

Cite this paper

Online since:

April 1997

Authors:

P. Jonnard, C. Hombourger, F. Vergand, C. Bonnelle

Keywords:

Dielectric, Electron-Induced x-Ray Emission Spectroscopy, Metal-Dielectrics Interface, Valence States

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: