Growth and Transport Property of Polycrystalline Silicon Fabricated with Intentional Orientation Control on Glass

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Periodical:

Key Engineering Materials (Volumes 181-182)

Edited by:

N. Murata, K. Shinozaki and T. Kimura

Pages:

125-128

DOI:

10.4028/www.scientific.net/KEM.181-182.125

Citation:

T. Kamiya et al., "Growth and Transport Property of Polycrystalline Silicon Fabricated with Intentional Orientation Control on Glass", Key Engineering Materials, Vols. 181-182, pp. 125-128, 2000

Online since:

May 2000

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Price:

$35.00

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