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HomeKey Engineering MaterialsKey Engineering Materials Vols. 181-182Growth and Transport Property of Polycrystalline...

Growth and Transport Property of Polycrystalline Silicon Fabricated with Intentional Orientation Control on Glass

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Electroceramics in Japan III

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Periodical:

Key Engineering Materials (Volumes 181-182)

Pages:

125-128

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.181-182.125

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Online since:

May 2000

Authors:

Toshio Kamiya, Kouichi Nakahata, Toshiyuki Sameshima, Kazuyoshi Ro, Atsushi Suemasu, Charles M. Fortmann, Isamu Shimizu

Keywords:

Free Carrier Mobility, Hall Mobility, Hydrogen Plasma Passivation, SiF₄, VHF Plasma Enhanced Chemical Vapor Deposition

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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