[1]
Q. Zou, H.E. Ruda and B.G. Yacobi: Appl. Phys. Lett. Vol. 78 (2001), p.1282.
Google Scholar
[2]
T. Maeder, P. Muralt, L. Sagalowicz, I. Reaney, M. Kohli, A. Kholkin and N. Setter: Appl. Phys. Lett. Vol. 68 (1996), p.776.
DOI: 10.1063/1.116529
Google Scholar
[3]
G.J.M. Dormans, J.H.H.M. Kemperman, R.A.M. Wolters, P.J. van Veldhoven, M.S. de Keijser, R.B.F. Janssen, M.J.E. Ulenaers and P.K. Larsen: Microelectron. Eng. Vol. 29 (1995), p.33.
DOI: 10.1016/0167-9317(95)00110-7
Google Scholar
[4]
K. Saegusa: Jpn. J. Appl. Phys. Vol. 36, Pt. 1 (1997), p.6888.
Google Scholar
[5]
K. Li, H.L.W. Chan, K.W. Lee and C.L. Choy: Integ. Ferroelectrics Vol. 30 (2000), p.253.
Google Scholar
[6]
G. Yi, Z. Wu and M. Sayer: J. Appl. Phys. Vol. 64 (1988), p.2717.
Google Scholar
[7]
C.K. Kwok and S.B. Desu: Appl. Phys. Lett. Vol. 60 (1992), p.1430.
Google Scholar
[8]
A.C. Rastogi, S.R. Darvish and P.K. Bhatnagar: Mater. Chem. Phys. Vol. 73 (2002).
Google Scholar