Electrical and Optical Properties of SiOC Films with Low Dielectric Constant

Young Hun Yu; Ho Jeong Ko; Chi Kyu Choi

doi:10.4028/www.scientific.net/KEM.270-273.814

Paper Titles

Application of Scanning Laser Source Technique for Nondestructive Flaw Detection
p.787

Fatigue Life Estimation Using Diffusion of Laser
p.793

Automatic Stress Analyzing System by Digital Speckle Photography Using 2-D Hybrid Method
p.800

Detection of Spot-Type Defects on Liquid Crystal Display Modules
p.808

Electrical and Optical Properties of SiOC Films with Low Dielectric Constant
p.814

Reflow Characteristics of Copper in an Oxygen Ambient
p.820

Metallic Multilayer Sputtering on Polycarbonate for EMI Shielding
p.826

Ultrasonic Measurement of a Small Deformation of Hard Disk Drive Suspension
p.831

Application of the ESPI Method for Thermal Friction Noise in Rear Cover of TV
p.837

HomeKey Engineering MaterialsKey Engineering Materials Vols. 270-273Electrical and Optical Properties of SiOC Films...

Electrical and Optical Properties of SiOC Films with Low Dielectric Constant

Abstract:

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 270-273)

Pages:

814-819

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.270-273.814

Citation:

Cite this paper

Online since:

August 2004

Authors:

Young Hun Yu, Ho Jeong Ko, Chi Kyu Choi

Keywords:

Amorphous, Low-K Material, PECVD, SiOC, Thin Film

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] M. A. Tamor and C. H. Wu, J. Appl. Phys. 67 (1990), p.1007.

Google Scholar

[2] J. Y. Kim, M. S. Hwang, Y. H. Kim, H. J. Kim and Y. Lee: J. Appl. Phys. Vol. 90 (2001), p.2469.

Google Scholar

[3] S. Y. Jing, H. J. Lee and C. K. Choi: J. Korea Phys. Soc. Vol. 41 (2002), p.769.

Google Scholar

[4] C. S. Yang, K. S. Oh, J. Y. Ryu, D. C. Kim, S. Y. Jing and C. K. Choi: Thin Solid Films Vol. 390 (2001), p.113.

Google Scholar

[5] K. Endo, K. Shinoda and T. Tatsumi: J. Appl. Phys. Vol. 86 (1999), p.2739.

Google Scholar

[6] K. Aumaille, C. Vallee, A. Granier, A. Goullet, F. Gaboriau and G. Turban: Thin Solid Films Vol. 359(2000), p.188.

DOI: 10.1016/s0040-6090(99)00883-4

Google Scholar

[7] Y. H. Kim, H .J. Kim, J. Y. Kim and Y. Lee: J. Korea Phys. Soc. Vol. 40 (2002), p.94.

Google Scholar

[8] G. D. Lody: Hydrogenated Amorphous Silicon in semiconductor and semimetals (Academic Press, New York, 1984).

Google Scholar

[9] N. F. Mott: Philos. Mag. Vol. 17 (1968), p.1259.

Google Scholar

[10] D. R. Penn: Phys. Rev. Vol. 128 (1962), p. (2093).

Google Scholar

[11] C. S. Yang, Y. H. Yu, K. M. Lee, H. J. Lee and C. K. Choi: Thin Solid Films Vol. 435(2003), p.166.

Google Scholar

[12] P. N. Sen and M. F. Thorpe: Phys. Rev. B Vol. 15 (1977), p.4030.

Google Scholar

[13] Y. H. Kim, S. K. Lee and H. J. Kim: J. Vac. Sci. Technol. Vol. A18 (2000), p.1216.

Google Scholar

[14] J. Tauc, R. Grigorovici and A. Vancu: Phys. Stat. Sol. Vol. 15 (1966), p.9627.

Google Scholar