Effect of Al Composition on Luminescence Properties of Rare-Earth Implanted into AlGaN

Akira Yoshida; Akihiro Wakahara; Yasuo Nakanishi; Hiroshi Okada; Takeshi Ohshima; Hisayoshi Itoh; Young Tae Kim

doi:10.4028/www.scientific.net/KEM.270-273.890

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 270-273Effect of Al Composition on Luminescence...

Effect of Al Composition on Luminescence Properties of Rare-Earth Implanted into AlGaN

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Key Engineering Materials (Volumes 270-273)

Pages:

890-894

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.270-273.890

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Online since:

August 2004

Authors:

Akira Yoshida, Akihiro Wakahara, Yasuo Nakanishi, Hiroshi Okada, Takeshi Ohshima, Hisayoshi Itoh, Young Tae Kim

Keywords:

Group-III Nitride, Luminescence, Rare-Earth Impurity

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