Effects of Donor Doping on Microstructure and Electrical Properties of Bismuth Layer-Structured Bi₄Ti₃O₁₂ Ceramics

Abstract:

A study was conducted on the effects of donor dopants, Nb2O5 and WO3, on microstructure and electric properties of Bi4Ti3O12 (BIT) ceramics. X-ray diffraction patterns of the materials showed a single orthorhombic phase structure. The microstructure results revealed the appearance of plate-like grain. The donor doping decreased the conductivity of BIT by as much as 3 orders of magnitude. The dielectric and ferroelectric properties of doped-BIT materials were also investigated. The decrease in the electrical conductivity allowed the doped samples to be poled to develop piezoelectricity. Thermal annealing studies of the samples indicated the donor-doped BIT were suitable candidate materials for high-temperature piezoelectric applications.

• Periodical: Key Engineering Materials (Volumes 280-283)
• Pages: 259-262
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.280-283.259
• Online since: February 2007
• Authors: Lina Zhang, Su Chuan Zhao, Liao Ying Zheng, Guo Rong Li, Qing Rui Yin
• Keywords: Bi₄Ti₃O₁₂ Ceramics, Donor Doping, Electrical Conductivity, Piezoelectric Properties

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