The Role of Niobium in (Ca, Si, Ce, Nb)-Doped TiO2 Varistors

Shao Hua Luo; Zi Long Tang; Hong Yun Li; Zhong Tai Zhang; Xi Zhou Xiong

doi:10.4028/www.scientific.net/KEM.280-283.297

Paper Titles

Preparation and Photoluminescence Properties of Quantum Size Zinc Oxide Colloids
p.281

Voltage Response of ZnO Varistors to 8/20 µs Surge Current
p.285

Nonlinear Electrical Properties of (Sc, Ta) Doped TiO₂ Varistor Ceramics
p.289

Ag Nanoparticle Enhanced Photocatalytic Activity of Rutile TiO₂ Films Prepared by Electrostatic Self-Assembly Method
p.293

The Role of Niobium in (Ca, Si, Ce, Nb)-Doped TiO₂ Varistors
p.297

Effect of La₂O₃ and CeO₂ on Nb₂O₅ Doped TiO₂ Ceramic Varistors
p.301

Study on the Gas Sensitivity of a CeO₂ Based Ceramic Sensing Element: Structure and Characteristic
p.305

Preparation and CO₂ Gas Sensitive Properties of CuO-SrTiO₃-Based Semiconductor Thin Films
p.311

Oxygen Sensitivity of SrFeO_3-δ Thin Films Prepared by Sol-Gel Method
p.315

HomeKey Engineering MaterialsKey Engineering Materials Vols. 280-283The Role of Niobium in (Ca, Si, Ce, Nb)-Doped TiO2...

The Role of Niobium in (Ca, Si, Ce, Nb)-Doped TiO₂ Varistors

Abstract:

The present work attempted to investigate the effect of Nb addition on the electrical properties of the (Ca,Si,Ce,Nb)-doped TiO2 ceramics. The content of added niobium is in the range 0.1-1.0mol %, while that of the other additives keeps constant. The results showed that an optimal composition doped with 0.8mol% Nb2O5, followed by sintering at 1350°C, was obtained with low V1 mA of 7.22V, high nonlinear coefficient of 5.76, ultrahigh dielectric constant (er = 86000) as well as relatively low loss (tgd = 0.52) in room temperature at 1 kHz. SEM studies show that change of niobium had significant influence on grain growth and micro structural characteristics of the sintered samples.