Enhanced Sintering of TiB2 with SiC Addition Prepared by Polycarbosilane Infiltration

K.J. Lee; Shin Hyuk Kang; Deug Joong Kim

doi:10.4028/www.scientific.net/KEM.287.102

Paper Titles

Development of the Reaction-Bonded Si/SiC Ceramic Tubes for High-Temperature Heat Exchangers
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Solidifying Concentrated Si₃N₄ Suspensions for Gelcasting by Ultrasonic Effects
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Fabrication of Silicon Carbide Fiber and Non-Woven Fabric from the Polycarbosilane Produced Using a Catalytic Process
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Fabrication of SiC-Based Ceramic Patterns via Soft Lithography of Polymeric Precursors
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Enhanced Sintering of TiB₂ with SiC Addition Prepared by Polycarbosilane Infiltration
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Preparation of Polycarbosilane Using a Catalytic Process and Its Practical Uses
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Polymer - Filler Derived SiO₂/Si-O-C Composites
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Organic-Inorganic Solution Technique for Fabrication of Porous CaO-SiO₂ Based Powders
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Colloidal Processing of SiC with Rare-Earth Ion
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 287Enhanced Sintering of TiB2 with SiC Addition...

Enhanced Sintering of TiB₂ with SiC Addition Prepared by Polycarbosilane Infiltration

Abstract:

The sintering of TiB2 was limited due to its high degree of covalent bonding and low self diffusion coefficient. To solve this problem, hot pressing has been used for fabricating TiB2 ceramics, but this process was expensive and limited to the production of simple shapes. Pressureless sintering has also been studied, but its sintering temperatures is, as high as more than 2000°C, resulting in exaggerated grain growth and decrease of mechanical properties. The addition of SiC was found to be effective in improving the densification. However, a supplementary HIP process was needed to enhance the mechanical properties. In this study, the densification behavior and microstructural change of TiB2 ceramics infiltrated by the polycarbosilane of SiC precusor were investigated. The infiltrated polycarbosilane was converted to SiC during heating and densification was accelerated.

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Periodical:

Key Engineering Materials (Volume 287)

Pages:

102-107

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.287.102

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Online since:

June 2005

Authors:

K.J. Lee, Shin Hyuk Kang, Deug Joong Kim

Keywords:

Infiltration, Polycarbosilane, Silicon Carbide (SiC), Titanium Diboride

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