Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Abstract:

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An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.

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Periodical:

Edited by:

Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki

Pages:

95-98

DOI:

10.4028/www.scientific.net/KEM.301.95

Citation:

M. Yamashita et al., "Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy", Key Engineering Materials, Vol. 301, pp. 95-98, 2006

Online since:

January 2006

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$35.00

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