Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Masashi Yamashita; Yukari Ishikawa; Hitoshi Ohsato; Noriyoshi Shibata

doi:10.4028/www.scientific.net/KEM.301.95

Paper Titles

Interfacial Structure of GaN and InN Thin Films Grown on ZnO Substrates
p.79

Electrochemical Properties of Nanoporous TiO₂ Films
p.83

Effects of Hydrolysis on Photochromic ZrO₂ Precursor Solutions
p.87

Preparation of Lithium Ion Conductive Li_4.2Al_0.2Si_0.8O₄ Thin Films Using Sol-Gel Process
p.91

Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
p.95

Synthesis of Thin Film by Self-Assembly of Perovskite Nanosheets
p.99

A LTCC Material with Low Temperature Coefficient of Resonance Frequency
p.105

Characteristic Design of Microwave Dielectric Materials by Using Self-Flux Compositions
p.109

Evaluation of Characteristics of Electromagnetic Wave Absorbers of Composites Fabricated by Mechanical Milling
p.113

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Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Abstract:

An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.