Interfacial Structure of GaN and InN Thin Films Grown on ZnO Substrates

Takeshi Ohgaki; Shigeaki Sugimura; Haruki Ryoken; Naoki Ohashi; Isao Sakaguchi; Takashi Sekiguchi; Hajime Haneda

doi:10.4028/www.scientific.net/KEM.301.79

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 301Interfacial Structure of GaN and InN Thin Films...

Interfacial Structure of GaN and InN Thin Films Grown on ZnO Substrates

Abstract:

Gallium nitride (GaN) and indium nitride (InN) films were grown on a zinc oxide (ZnO) single crystalline substrate with a (0001) orientation using molecular beam epitaxy. The interfacial structure and relaxation mechanism of the lattice mismatch at the nitride/oxide interface were investigated, particularly the effects of an (In,Ga)N alloy buffer layer on the interfacial structure of the GaN films. This layer significantly improved the crystallinity of the GaN films by gradually relaxing the lattice mismatch between the GaN and ZnO. In spite of the large lattice mismatch between InN and ZnO, InN films with high crystallinity were grown without an (In,Ga)N buffer layer. Structural analysis revealed that an InN layer with low crystallinity formed spontaneously during the initial growth stage, and this amorphous-like layer likely contributed to relaxation of the interfacial stress caused by the lattice mismatch.

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Key Engineering Materials (Volume 301)

Pages:

79-82

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.301.79

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Online since:

January 2006

Authors:

Takeshi Ohgaki, Shigeaki Sugimura, Haruki Ryoken, Naoki Ohashi, Isao Sakaguchi, Takashi Sekiguchi, Hajime Haneda

Keywords:

Gallium Nitride (GaN), Indium Nitride, Interfacial Structure, MBE Structure, Substrate, Thin Film, Zinc Oxide (ZnO)

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References

[1] J. Suda and H. Matsunami, J. Cryst. Growth, 237-239 (2002), p.1114.

Google Scholar

[2] S. K. Hong, H. J. Ko, Y. Chen, T. Hanada and T. Yao, J. Vac. Sci. Technol. B, 18 (2000), p.2313.

Google Scholar

[3] K. Kishino, A. Kikuchi, M. Yoshizawa, N. Fujita, K. Kushi and H. Sasamoto, IEEE J. Select. Topics Quantum Electron., 4 (1998), p.550.

DOI: 10.1109/2944.704116

Google Scholar

[4] H. Riechert, R. Averbeck, A. Graber, M. Schienle, U. Strau and H. Tews, Mat. Res. Soc. Symp. Proc., 449 (1997), p.149.

Google Scholar

[5] F. Hamdani, A. E. Botchkarev, H. Tang, W. Kim and H. Morkoc, Appl. Phys. Lett., 71 (1997), p.3111. E-mail: OHGAKI. Takeshi@nims. go. jp Fax: 029-855-1196.

Google Scholar