Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO₃ Ferroelectrics/Insulator Stacking Layers

Abstract:

The (Y,Yb)MnO3 films were crystallized on Y2O3 layers using alkoxy-derived precursor solutions. As a result of investigation of the effect of the Y2O3 layer on the dielectric properties of the (Y,Yb)MnO3/Y2O3/Si, the crystallographic properties such as the orientation and surface morphology of the (Y,Yb)MnO3 thin films depended on the crystallographic appearance of the insulator layer. Following that, the dielectric properties of the MFIS structures varied. For the construction of excellent MFIS structure, the improvement of the orientation, crystallinity, and surface smoothness of the (Y,Yb)MnO3 film by the optimization of the microstructure and dielectric property of the insulator is necessary.

• Periodical: Key Engineering Materials (Volume 301)
• Pages: 65-70
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.301.65
• Online since: January 2006
• Authors: Kazuyuki Suzuki, Kiyotaka Tanaka, Tatsuo Kimura, Kaori Nishizawa, Takeshi Miki, Kazumi Kato
• Keywords: (Y,Yb)MnO₃, Alkoxy-Derived Precursor, C-V Characteristics, FET-Type Nonvolatile Memory, Leak Current Density, MFIS Structure, Y₂O₃

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[2] [4] [6] [8] [10] [12] -15 -10 -5 0 5 10 15 Voltage (V) Capacitance (pF) 750ºC 700ºC 3. 6V 2. 6V Fig. 5 Capacitance-voltage characteristics of Pt/Y0. 5Yb0. 5MnO3/Y2O3/Si capacitors crystallized at 750ºC and 700ºC in Ar. Fig. 4 Capacitance-voltage characteristics of Pt/YMnO3/Y2O3/Si capacitors crystallized at 750ºC in Ar. YMnO3(100nm)/Y2O3(50nm) Voltage (V).

DOI: 10.1049/el:19710179

[2] [4] [6] [8] [10] [12] -15 -10 -5 0 5 10 15 Capacitance (pF) 3. 7V.

[2] [4] [6] [8] [10] [12] -15 -10 -5 0 5 10 15 Voltage (V) Capacitance (pF) 3. 4V (a) CSD-Y2O3film (b) sputtered Y2O3film.