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Dielectric and Piezoelectric Properties of Ba(Ti,Zr)O3 Thin Films Consisted of Nano-Crystals

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Abstract:

Lead-free Ba(Ti1-xZrx)O3 (BTZ) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by the chemical solution deposition (CSD) process. The microstructure of the BTZ (x = 0.00 to 0.20) thin films was improved by additional sintering process, and their crystallite sizes were increased in each composition. The dielectric constant er and piezoelectric constant d33 of the BTZ thin films depended on the crystallite size. We give a guide for further investigation to improve the characteristics of BTZ thin films.

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Periodical:

Key Engineering Materials (Volume 301)

Pages:

53-56

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.301.53

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Online since:

January 2006

Authors:

Kiyotaka Tanaka, Kazuyuki Suzuki, Tatsuo Kimura, Kaori Nishizawa, Takeshi Miki, Kazumi Kato

Keywords:

Additional Sintering, Ba(Ti1-xZrx)O3, Chemical Solution Deposition Process, Lead-Free Ferroelectrics, Piezoelectric Constant d33, Pinching Effect

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] T. N. Verbitskaia, G. S. Zhdnaov, I. N. Venevtsev and S. P. Soloviev: Sov. Phys. Cryst. 3 (1958) 182.

Google Scholar

[2] D. Hennings, A. Schenell and G. Simon: J. Am. Ceram. Soc. 65 (1982) 539.

Google Scholar

[3] Y. Masuda, S. Fujita, A. Baba, H. Masumoto, K. Nagata and T. Hirai: Jpn. J. Appl. Phys. 36 (1997) 5834.

Google Scholar

[4] H. Kakemoto, K. Kakimoto, S. Fujita and Y. Masuda: Jpn. J. Appl. Phys. 39 (2000) 5374.

Google Scholar

[5] T. Tohma, H. Masumoto and T. Goto: Jpn. J. Appl. Phys. 41 (2002) 6643.

Google Scholar

[6] S. Sakka and T. Kokubo: Jpn. J. Appl. Phys. 22 (1983) Suppl. 22-2 p.3.

Google Scholar

[7] K. Kato: Integr. Ferroelectr. 22 (1998) 13.

Google Scholar

[8] K. Tanaka, K. Suzuki, D. Fu, K. Nishizawa, T. Miki and K. Kato: Key Eng. Mater. 269 (2004) 57.

Google Scholar

[9] K. Tanaka, K. Suzuki, D. Fu, K. Nishizawa, T. Miki and K. Kato: Integr. Ferroelectr., in print.

Google Scholar

[10] K. Tanaka, K. Suzuki, D. Fu, K. Nishizawa, T. Miki and K. Kato: Jpn. J. Appl. Phys. 43 (2004) 6525.

Google Scholar

[11] D. Fu, K. Suzuki and K. Kato: Jpn. J. Appl. Phys. 41 (2002).

Google Scholar

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