Structure Analyses and Electrical Properties of Er-Doped ZnO Thin Films

Shigeru Tanaka; Yukari Ishikawa; Dai Nezaki; Mitsuhiro Okamoto; Noriyoshi Shibata

doi:10.4028/www.scientific.net/KEM.301.71

Paper Titles

Dielectric and Piezoelectric Properties of Ba(Ti,Zr)O₃ Thin Films Consisted of Nano-Crystals
p.53

Synthesis and Properties of Nd-Substituted Bismuth Titanate Polycrystalline Thin Films with a-/b-Axes Orientation
p.57

Development of Lead-Free Piezoelectric Thick Films with a/b-Axis-Oriented Bi_4-xPr_xTi₃O₁₂
p.61

Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO₃ Ferroelectrics/Insulator Stacking Layers
p.65

Structure Analyses and Electrical Properties of Er-Doped ZnO Thin Films
p.71

Effect of Al-Doping into Zinc Oxide Films Prepared by Pulsed Laser Deposition Method with Various Oxidation Assists
p.75

Interfacial Structure of GaN and InN Thin Films Grown on ZnO Substrates
p.79

Electrochemical Properties of Nanoporous TiO₂ Films
p.83

Effects of Hydrolysis on Photochromic ZrO₂ Precursor Solutions
p.87

HomeKey Engineering MaterialsKey Engineering Materials Vol. 301Structure Analyses and Electrical Properties of...

Structure Analyses and Electrical Properties of Er-Doped ZnO Thin Films

Abstract:

Er-doped ZnO thin films which emitted intense infrared light in the vicinity of 1.5 μm were investigated from points of view of the microstructure and electrical properties. The result of X-ray diffraction (XRD) pattern revealed that the crystal lattice of ZnO was apparently expanded by doping of Er ions. Electrical resistance in the direction of thickness of Er-doped ZnO film showed linear behavior, which was resemble to that of undoped ZnO film. Infrared light emission phenomenon of the film was related to the chemical / physical state of Er ions in ZnO matrix.