Structure Analyses and Electrical Properties of Er-Doped ZnO Thin Films

Abstract:

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Er-doped ZnO thin films which emitted intense infrared light in the vicinity of 1.5 μm were investigated from points of view of the microstructure and electrical properties. The result of X-ray diffraction (XRD) pattern revealed that the crystal lattice of ZnO was apparently expanded by doping of Er ions. Electrical resistance in the direction of thickness of Er-doped ZnO film showed linear behavior, which was resemble to that of undoped ZnO film. Infrared light emission phenomenon of the film was related to the chemical / physical state of Er ions in ZnO matrix.

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Periodical:

Edited by:

Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki

Pages:

71-74

DOI:

10.4028/www.scientific.net/KEM.301.71

Citation:

S. Tanaka et al., "Structure Analyses and Electrical Properties of Er-Doped ZnO Thin Films", Key Engineering Materials, Vol. 301, pp. 71-74, 2006

Online since:

January 2006

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Price:

$35.00

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