Effect of Al-Doping into Zinc Oxide Films Prepared by Pulsed Laser Deposition Method with Various Oxidation Assists

Abstract:

The defect structure of undoped and Al-doped ZnO films deposited by pulse laser deposition was investigated to understand the charge compensation mechanism in those films. Particularly, the effect of oxidation assist, i.e., O2 gas or oxygen radicals, on the defect structure of the resultant films was examined. The examination indicated that the defect structure of undoped ZnO was not affected by the oxidation assist, whereas the properties of Al-doped ZnO obviously varied with the method of oxidation assist. An analyses of oxygen diffusion in these films revealed that Al-doping enhanced formation of oxygen defects in Al-doped ZnO.

• Periodical: Key Engineering Materials (Volume 301)
• Pages: 75-78
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.301.75
• Online since: January 2006
• Authors: Haruki Ryoken, Isao Sakaguchi, Takeshi Ohgaki, Yoshitaka Adachi, Tadashi Takenaka, Naoki Ohashi, Hajime Haneda
• Keywords: Impurity, Pulsed Laser Deposition (PLD), Secondary Ion Mass Spectroscopy (SIMS), Zinc Oxide (ZnO)

References

[1] T. Minami, MRS Bull. 25 (2000) 38.

[2] T. Ogino, M. Komatsu et al.: Key Engineering Materials, 181-182 (2000) 101-104.

[3] T. Ohgaki et al., J. Appl. Phys., 93 (2003) 1961-65.

[4] K. I. Hagemark and L. C. Chacka: Journal of Solid State Chemistry, 15 (1975) 261-270.

[5] H. Ryoken et al., Submitted to Jpn. J. Appl. Phys.

[6] Y. Oishi and W. D. Kingery: J. Chem. Phys., 33 (1960) 480-486.

[7] A. F. Kohan et al., Phys. Rev. B, 61 (2000) 15019-27.

[8] T. Ohgaki et al., Key Engineering Materials, 248 (2003) 91-94.

[9] H. Ryoken et al., J. Jpn. Soc. Pow. Pow. Metallu., in press.

[10] D. Hallwig and H.G. Sockel, Reactivity of Solids (Plenum, New York, 1977) p.631 e-mail: HANEDA. Hajime@nims. go. jp Fax: [phone] Fig. 5 Arrhenius plots for prepared films and bulk ZnO.