Strength Design and Minimization of Residual Stresses in Reversible GaAs Wafer Bonding Process

Abstract:

The GaAs wafer bonding process is investigated to reduce the mechanical failures of GaAs wafer based on strength design concept. Three-point bending experiment is performed to measure the fracture strength of GaAs wafer, of which cleavage takes place on (110) plane. We propose a simple method for minimizing the thermal residual stress in a three-layer structure, of which the basic idea is to use an appropriate steady-state temperature gradient to the wafer bonding process. The optimum bonding condition of GaAs/wax/sapphire structure is determined based on the proposed method. The effect of material anisotropy on the thermal residual stress is also analyzed by finite element method.

• Periodical: Key Engineering Materials (Volumes 306-308)
• Pages: 1337-1342
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.306-308.1337
• Online since: March 2006
• Authors: S.T. Choi, Jun Yeob Song, Jae Hyun Kim, S. Lee, Y.Y. Earmme
• Keywords: Fracture Strength, Reversible Wafer Bonding Process, Thermal Residual Stress

References

[1] U. Gosele and Q. -Y. Tong, Annual Review of Materials Science Vol. 28, (1998), p.215.

[2] V. Dragoi, T. Glinsner, G. Mittendorfer, M. Wimplinger and P. Lindner, IEEE Proceedings CAS2002 (2002), p.331.

[3] Matweb, The online materials information resource. Available: http: /www. matweb. com.

[4] Z. Suo and J.W. Hutchinson, Int. J. Fract. Vol. 43 (1990), p.1.

[5] ABAQUS User's Manual, Ver. 5. 8 (HKS Inc., Pawtucket, RI, USA 1998).