Strength Design and Minimization of Residual Stresses in Reversible GaAs Wafer Bonding Process

Abstract:

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The GaAs wafer bonding process is investigated to reduce the mechanical failures of GaAs wafer based on strength design concept. Three-point bending experiment is performed to measure the fracture strength of GaAs wafer, of which cleavage takes place on (110) plane. We propose a simple method for minimizing the thermal residual stress in a three-layer structure, of which the basic idea is to use an appropriate steady-state temperature gradient to the wafer bonding process. The optimum bonding condition of GaAs/wax/sapphire structure is determined based on the proposed method. The effect of material anisotropy on the thermal residual stress is also analyzed by finite element method.

Info:

Periodical:

Key Engineering Materials (Volumes 306-308)

Edited by:

Ichsan Setya Putra and Djoko Suharto

Pages:

1337-1342

DOI:

10.4028/www.scientific.net/KEM.306-308.1337

Citation:

S.T. Choi et al., "Strength Design and Minimization of Residual Stresses in Reversible GaAs Wafer Bonding Process", Key Engineering Materials, Vols. 306-308, pp. 1337-1342, 2006

Online since:

March 2006

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Price:

$35.00

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