Strength Design and Minimization of Residual Stresses in Reversible GaAs Wafer Bonding Process
The GaAs wafer bonding process is investigated to reduce the mechanical failures of GaAs wafer based on strength design concept. Three-point bending experiment is performed to measure the fracture strength of GaAs wafer, of which cleavage takes place on (110) plane. We propose a simple method for minimizing the thermal residual stress in a three-layer structure, of which the basic idea is to use an appropriate steady-state temperature gradient to the wafer bonding process. The optimum bonding condition of GaAs/wax/sapphire structure is determined based on the proposed method. The effect of material anisotropy on the thermal residual stress is also analyzed by finite element method.
Ichsan Setya Putra and Djoko Suharto
S.T. Choi et al., "Strength Design and Minimization of Residual Stresses in Reversible GaAs Wafer Bonding Process", Key Engineering Materials, Vols. 306-308, pp. 1337-1342, 2006