The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

Abstract:

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Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

Info:

Periodical:

Key Engineering Materials (Volumes 306-308)

Edited by:

Ichsan Setya Putra and Djoko Suharto

Pages:

1313-1318

DOI:

10.4028/www.scientific.net/KEM.306-308.1313

Citation:

J.S. Kim et al., "The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films", Key Engineering Materials, Vols. 306-308, pp. 1313-1318, 2006

Online since:

March 2006

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$35.00

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