The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

J.S. Kim; B.H. Park; T.J. Choi; Se Hyun Shin; Jae Chul Lee; Man Jong Lee; S.A. Seo; I.K. Yoo

doi:10.4028/www.scientific.net/KEM.306-308.1313

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 306-308The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin...

The Dielectric Properties of Pb_0.65Ba_0.35ZrO₃ Thin Films

Abstract:

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

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Periodical:

Key Engineering Materials (Volumes 306-308)

Pages:

1313-1318

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.306-308.1313

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March 2006

Authors:

J.S. Kim, B.H. Park, T.J. Choi, Se Hyun Shin, Jae Chul Lee, Man Jong Lee, S.A. Seo, I.K. Yoo

Keywords:

BST, Microwave Tunable Device, PBZ, Pulsed Laser Deposition (PLD), TCC, Tunability

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References

[1] S. Gevorgian, P. K. Petrov, Z. Ivanov and E. Wikborg, Appl. Phys. Lett. 79, 1861 (2001).

Google Scholar

[2] S. Hyun, J. H. Lee, S. S. Kim and K. Char et al, Appl. Phys. Lett. 77, 3084 (2000).

Google Scholar

[3] B. H. Park, Y. Gim, Y. Fan, Q. X. Jia and P. Lu, Appl. Phys. Lett. 77, 2587 (2000).

Google Scholar

[4] B. H. Park, E. J. Peterson, and Q. X. Jia, J. Lee, X. Zeng, W. Si and X. X. Xi, Appl. Phys. Lett. 78, 533 (2001).

Google Scholar

[5] K. B. Chong, L. B. Kong and Linfeng Chen, L. Yan, C. Y. Tan, T. Yang, C. K. Ong and T. Osipoxicz, J. Appl. Phys. Lett. 82, 2118 (2003).

Google Scholar

[6] Y. Lin, X. Chen, S. W. Lie and C. L. Chen et al, Appl. Phys. Lett. 84, 577 (2004).

Google Scholar

[7] Toshio Mitsui et al, Group 3 Ferro- and Antiferroelectric Substance, Numerical Data and Functional Relationships in Science and Technology, LANDOLT-BÖRNSTEIN (1969).

Google Scholar

[8] B. P. Pokharel, M. K. Datta and D. Pandey, J. Matter. Sci. 34, 691 (1999).

Google Scholar

[9] J. H. Tseng and T. B. Wu, Appl. Phys. Lett. 78, 1721 (2001).

Google Scholar