Conductivity Switching Behaviors in ZrO2 and YSZ Films Deposited by Pulsed Laser Depositions

Abstract:

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Polycrystalline ZrO2 and yttria-stablilized ZrO2 thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Pt/ZrO2/Pt and Pt/YSZ/Pt capacitor structures show giant conductivity switching behaviors which can be utilized for nonvolatile memory devices. Maximum on/off ratio of 106 and good endurance even after 105 times conductivity switching are observed in a typical Pt/ZrO2/Pt whose ZrO2 film has been deposited at 100 °C and an oxygen pressure of 50 mTorr. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low voltage region (V < 1.4 V) depending on the value of previously applied high voltage and Schottky-type conduction in the high voltage region (1.4 V < V < 8.9 V). It seems that conductivity switching behaviors in our Pt/ZrO2/Pt structure result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages. A Pt/YSZ/Pt capacitor structure has more stable reset voltage and current state than a Pt/ZrO2/Pt capacitor structure. Moreover, a Pt/YSZ/Pt capacitor structure shows higher Conductivity than a Pt/ZrO2/Pt capacitor structure, which may result from substitution of Y3+ ions for Zr4+ ions.

Info:

Periodical:

Key Engineering Materials (Volumes 306-308)

Edited by:

Ichsan Setya Putra and Djoko Suharto

Pages:

1301-1306

DOI:

10.4028/www.scientific.net/KEM.306-308.1301

Citation:

S.H. Kim et al., "Conductivity Switching Behaviors in ZrO2 and YSZ Films Deposited by Pulsed Laser Depositions", Key Engineering Materials, Vols. 306-308, pp. 1301-1306, 2006

Online since:

March 2006

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$35.00

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